THS4011, THS4012
290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS
SLOS216B – JUNE 1999 – FEBRUARY 2000
THS4011
JG, D AND DGN PACKAGE
(TOP VIEW)
THS4012
Very High Speed
– 290 MHz Bandwidth (G = 1, –3 dB)
– 310 V/µs Slew Rate
†
D AND DGN PACKAGE
(TOP VIEW)
– 37 ns Settling Time (0.1%)
1OUT
1IN–
1IN+
V
CC+
NULL
IN–
NULL
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
2OUT
2IN–
2IN+
V
Very Low Distortion
– THD = –80 dBc (f = 1 MHz, R = 150 Ω)
CC+
IN+
OUT
NC
L
–V
CC
V
110 mA Output Current Drive (Typical)
CC–
7.5 nV/√Hz Voltage Noise
NC – No internal connection
Excellent Video Performance
– 70 MHz Bandwidth (0.1 dB, G = 1)
– 0.006% Differential Gain Error
– 0.01° Differential Phase Error
Cross Section View Showing
PowerPAD Option (DGN)
†
This device is in the Product Preview stage of development.
Please contact your local TI sales office for availability.
±5 V to ±15 V Supply Voltage
Available in Standard SOIC, MSOP
PowerPAD, JG, or FK Packages
THS4011
FK PACKAGE
(TOP VIEW)
Evaluation Module Available
description
The THS4011 and THS4012 are very high speed,
single/dual, voltage feedback amplifiers ideal for
a wide range of applications. The devices offer
very good ac performance with 290-MHz
bandwidth, 310-V/µs slew rate, and 37-ns settling
time (0.1%). These amplifiers have a high output
drive capability of 110 mA and draw only 7.8-mA
supply current per channel. For applications
requiring low distortion, the THS4011/12 operate
with a total harmonic distortion (THD) of –80 dBc
at f = 1 MHz. For video applications, the
THS4011/12 offer 0.1 dB gain flatness to 70-MHz,
0.006% differential gain error, and 0.01°
differential phase error.
3
2
1
20 19
NC
V
NC
IN–
NC
IN+
NC
4
5
6
7
8
18
17
16
15
14
CC+
NC
OUT
NC
9
10 11 12 13
RELATED DEVICES
DESCRIPTION
DEVICE
THS4011/2
THS4031/2
THS4061/2
290-MHz Low Distortion High-Speed Amplifiers
100-MHz Low Noise High Speed-Amplifiers
180-MHz High-Speed Amplifiers
CAUTION: THE THS4011 AND THS4012 provide ESD protection circuitry. However, permanent damage can still occur if this device
is subjected to high-energy electrostatic discharges. Proper ESD precautions are recommended to avoid any performance
degradation or loss of functionality.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2000, Texas Instruments Incorporated
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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