Datasheet > THP3207WS

THP3207WS

更新时间： 2022-10-24 08:59:27

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氮化镓功率器件TPH3207WS

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THP3207WS 数据手册

TPH3207WS

Distributors:www.zeztek.com/ for Sample and support

PRODUCT SUMMARY (TYPICAL)

GaN Power

Low-loss Switch

V_DS(V)

650

R_DS(on)(m)

Q_rr(nC)

175

Features

 Low Q_rr

 Free-wheeling diode not required

 Quiet Tab™ for reduced EMI at high dv/dt

 GSD pin layout improves high speed design

 RoHS compliant

 High frequency operation

Applications

 Compact DC-DC converters

 AC motor drives

 Battery chargers

TO-247 3L Package

 Switch mode power supplies

Absolute Maximum Ratings (T_C=25 °C unless otherwise stated)

Symbol

I_D25°C

I_D100°C

I_DM

Parameter

Continuous Drain Current @T_C=25 °C

Continuous Drain Current @T_C=100 °C

Pulsed Drain Current (pulse width:10 s)

Drain to Source Voltage

Limit Value

Unit

31.5

240

V_DSS

V_TDS

V_GSS

P_D25°C

T_J

650

Transient Drain to Source Voltage ^a

800

Gate to Source Voltage

±18

Maximum Power Dissipation

178

°C

Operating Junction Temperature

Storage Temperature

-55 to 150

T_S

T_Csold

Soldering peak Temperature ^b

260

°C

Thermal Resistance

Symbol

Parameter

Typical

Unit

R_ΘJC

R_ΘJA

Junction-to-Case

Junction-to-Ambient

0.7

°C /W

Notes

a: In off state, spike duty cycle D<0.01, duration <1us

b: For 10 sec, 1.6mm from the case

www.transphormusa.com

TPH3207WS

June 27, 2016 JH

12 3 4 5 6 7 8

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