Datasheet > TGT4350E

TGT4350E

更新时间： 2024-04-09 19:02:37

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	435K
描述
50V,3A,Medium Power NPN Bipolar Transistor

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TGT4350E 数据手册

NPN Silicon Epitaxial Planar Transistor

TGT4350E

Features



Low Collector-Emitter saturation voltage V_CE(sat)

and corresponding low R_CE(sat)

High collector current capability

High collector current gain



Improved efficiency due to reduced heat generation

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-89

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-89

Ordering Information

Part Number

Package

SOT-89

Shipping Quantity

Marking Code

TGT4350E

1000 pcs / Tape & Reel

T4350

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Thermal Characteristics

Parameter

Power Dissipation ( T_A= 25°C )

Symbol

P_D

Value

0.55

Unit

°C /W

°C

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Lead

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

227

142

-65 ~ +150

Storage Temperature Range

T_STG

°C

STM5025A: February 2022

www.gmesemi.com

12 3 4

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