Datasheet > TGM9398-25

TGM9398-25

更新时间： 2024-09-16 14:45:11

品牌	Logo	应用领域
东芝 - TOSHIBA		高功率电源放大器射频微波功率放大器
页数	文件大小	规格书
3页	335K
描述
RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

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技术参数
数据手册

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TGM9398-25 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	射频/微波设备类型：	NARROW BAND HIGH POWER
Base Number Matches：	1

TGM9398-25 数据手册

MICROWAVE POWER GaN AMPLIFIER

TGM9398-25

FEATURES

･

BROAD BAND 2-STAGE AMPLIFIER

･

HIGH POWER

P1dB= 44.0dBm at Pin= 23.0dBm

HIGH GAIN

･

GL= 24dB(Typ) at Pin= 7dBm

HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

Pout

CONDITIONS

UNIT

dBm

MIN. TYP. MAX.

Output Power

43.0

44.0

2.6



VDD1,VDD2= 24V

IDDset= 1.2A

Drain Current

IDD*

3.5



@Pin= 23.0dBm

f = 9.3 to 9.8GHz

Power Added Efficiency

Linear Gain



add



@Pin= 7dBm

IDD=IDD1+ IDD2

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

UNIT

RATING

Drain- Source Voltage

VDD1, VDD2

VGG1,VGG2

IDD1

-10

Gate- Source Voltage

1.25

Drain Current

IDD2

7.5

Flange Temperature

Input Power

-40 to +90

+27

dBm

Storage Temperature

Tstg

-65 to +175



The information contained herein is presented as guidance for product use. No responsibility is assumed by

TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from

the use of product. No license to any intellectual property right is granted by this document. The information

contained herein is subject to change without prior notice. It is advisable to contact TOSHIBA before proceeding

with design of equipment incorporating this product.

0_20140408_No1233

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