Datasheet > 二极管 > 瞬态抑制器> TGL41-150A-E3/51

TGL41-150A-E3/51

更新时间： 2024-11-08 08:26:43

品牌	Logo	应用领域
威世 - VISHAY		二极管瞬态抑制器
页数	文件大小	规格书
6页	88K
描述
Trans Voltage Suppressor Diode, 200W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41, MELF-2

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中文翻译

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数据手册

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TGL41-150A-E3/51 数据手册

TGL41-6.8 thru TGL41-200A

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Plastic MELF package

• Ideal for automated placement

• Glass passivated chip junction

• Available in Unidirectional polarity only

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 % (200 W above 91 V)

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-213AB (GL41)

• Typical I less than 1 µA above 10 V rating

• Meets MSL level 1, per J-STD-020C, LF max peak

of 250 °C

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

MAJOR RATINGS AND CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of

sensor units for consumer, computer, industrial and

telecommunication.

V_BR

P_PPM

P_D

6.8 V to 200 V

400 W, 200 W

1.0 W

I_FSM

40 A

MECHANICAL DATA

T_jmax.

150 °C

Case: DO-213AB (GL41)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade

Polarity: Blue band denotes the cathode which is

positive with respect to the anode under normal TVS

operation.

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBO

P_PPM

P_D

VALUE

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Power dissipation on infinite heatsink at T_L= 75 °C

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾(Fig. 3)

Minimum 400

1.0

see next table

I_PPM

(2)

Peak forward surge current, 8.3 ms single half sine-wave unidirectional only

Maximum instantaneous forward voltage at 25 A for unidirectional only

Operating junction and storage temperature range

I_FSM

V_F

3.5

T_J, T_STG

- 55 to + 150

°C

Note:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2. Rating is 200 W above 91 V

(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum

Document Number 88403

05-Sep-06

www.vishay.com

12 3 4 5 6

中文翻译

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与TGL41-150A-E3/51相关器件

型号	品牌	获取价格	描述	数据表
TGL41-150A-E3/75	VISHAY	获取价格	Trans Voltage Suppressor Diode, 200W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TGL41-150A-E3/76	VISHAY	获取价格	Trans Voltage Suppressor Diode, 200W, 128V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TGL41-150A-E3/96	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41,
TGL41-150A-E3/97	VISHAY	获取价格	TVS DIODE 128V 207V DO213AB
TGL41-150AHE3	VISHAY	获取价格	DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-213AB, PLASTIC, GL41, 2 PIN, Transient
TGL41-150AR7	DIOTEC	获取价格	Transient Suppressor,
TGL41-150C	MICROSEMI	获取价格	500 Watt Transient Voltage Suppressor
TGL41-150C	TAITRON	获取价格	400W Surface Mount Transient Voltage Suppressor
TGL41-150C	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 121V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
TGL41-150CA	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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