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TGF4250

更新时间： 2024-11-08 22:19:47

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TGF4250 数据手册

T R I Q U I N T

S E M I C O N D U C T O R ,

I N C .

TGF4250-EEU

4.8 mm Discrete HFET

4250

4800 µm x 0.5 µm HFET

●

Nominal Pout of 34-dBm at 8.5-GHz

Nominal Gain of 8.5-dB at 8.5-GHz

Nominal PAE of 53% at 8.5-GHz

Suitable for high reliability applications

0,572 x 1,334 x 0,102 mm (0.023 x 0.053 x 0.004 in.)

PHOTO ENLARGEMENT

The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field

Effect Transistor (HFET) designed for high efficiency power applications up to 10. 5-GHz in Class A and

Class AB operation. Typical performance at 2-GHz is 34 -dBm power output, 13-dB gain, and 63% PAE.

Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach

methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4250-EEU

is readily assembled using automatic equipment.

DESCRIPTION

TriQuint Semiconductor, Inc.

•

Texas Facilities

•

(972) 995-8465

• www.triquint.com

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
TGF4250-EEU	TRIQUINT	获取价格	4.8 mm Discrete HFET
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