Datasheet > TGF4240-SCC

TGF4240-SCC

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TGF4240-SCC 数据手册

Product Data Sheet

March 31, 2003

2.4 mm Discrete HFET

TGF4240-SCC

Key Features and Performance

•

2400 µm x 0.5 µm HFET

Nominal Pout of 31.5 dBm at 8.5 GHz

Nominal Gain of 10.0 dB at 8.5 GHz

Nominal PAE of 56 % at 8.5 GHz

Frequency Range: DC - 12 GHz

Suitable for high reliability applications

0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)

Primary Applications

•

Cellular Base Stations

High-reliability space

Military

DESCRIPTION

The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure

Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12

GHz in Class A and Class AB operation.

Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE.

Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy

attach methods as well as thermocompression and thermosonic wire-bonding

processes.

The TGF4240-SCC is readily assembled using automatic equipment.

TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

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