Datasheet > TGBLH2201DF2

TGBLH2201DF2

更新时间： 2024-09-17 17:01:19

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
8页	1158K
描述
N:3A, 20V, 0.77W, Dual MOSFETs P:-3A, -20V, 1W, Dual MOSFETs

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中文翻译

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数据手册

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TGBLH2201DF2 数据手册

P＋N-Channel Enhancement Mode MOSFET

TGBLH2201DF2

Features



Excellent R_DS(ON)

Low gate charge

Halogen free

Qualified to AEC-Q101 standards for high reliability

Applications



Load Switch



PWM Application

Mechanical Data



Case: DFN2020-6LC

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

DFN2020-6LC

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TGBLH2201DF2

DFN2020-6LC

3000 pcs / Tape & Reel

H2201

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

G₁

G₂

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

±12

-20

±12

-3

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C)

Continuous Drain Current (T_A= 100°C)

Pulsed Drain Current ^*1

I_D

-2

-12

I_DM

Thermal Characteristics

Parameter

Symbol

G₁

G₂

Unit

Power Dissipation (T_A= 25°C)

P_D

R_θJA

T_J

0.77

162

°C /W

°C

Thermal Resistance Junction-to-Air

Operating Junction Temperature Range

Storage Temperature Range

125

-55 ~ +150

T_STG

°C

MTM1060A: August 2023 [1.1]

www.gmesemi.com

12 3 4 5 6 7 8

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