Crystal oscillator
Product Number (please contact us)
TG5032CDN :X1G005061xxxx00
TG5032SDN :X1G005071xxxx00
TCXO / VC-TCXO
ULTRA HIGH STABILITY
TG5032CDN
TG5032SDN
•Frequency range
•Supply voltage
:
:
10 MHz to 50 MHz
3.3 V Typ. / 5.0V Typ.
•Frequency / temperature characteristics
:
:
±0.1× 10-6 Max. *1
Actual size
•Frequency aging
±0.02× 10-6 Max./24 hours *2
•External dimensions: 5.0 × 3.2 × 1.45 mm (4 pads)
•Applications
•Features
:
:
FemtoCell, Small Cells
Ultra high stability
Specifications (characteristics)
TG5032CDN (CMOS output) TG5032SDN(Clipped sine wave)
Item
Symbol
Conditions / Remarks
Standard frequency
VC-TCXO
TCXO
10 MHz to 50 MHz
19.2, 26, 30.72, 40 MHz
VC-TCXO
TCXO
Output frequency range
f0
Supply voltage
VCC
T_stg
T_use
f_tol
C: 3.3 V ±5%, H: 5.0 V ±5% (Supply voltage range :2.7 V to 5.5 V)
Storage temperature
Operating temperature
Frequency tolerance
-40 ºC to +90 ºC
A: 0 ºC to +70 ºC
±2.0 × 10-6Max.
Storage as single product
Standard temp. range
After reflow, +25 ºC
C: 0 to +85 ºC or L: -10 to +70 ºC
: Option1 or 2 (Temperature range)
Option3
A: ±0.1 ×10-6Max. / A: 0 to +70 ºC (standard spec.)
H: ±0.25 ×10-6Max. / G: -40 to +85 ºC
Frequency/temperature
Characteristics *1
±0.08 ×10-6Max. / +50 to +70 ºC, ±0.1 ×10-6Max. / +15 to +85 ºC Option4
f0-TC
and ±0.25 ×10-6Max. / -5 to +85 ºC
±0.08 ×10-6Max. / +40 to +60 ºC, ±0.1 ×10-6Max. / 0 to +70 ºC
and ±0.25 ×10-6Max. / -20 to +70 ºC
±0.1 ×10-6 Max. (10 MHz≦f0≦40 MHz)
±0.2 ×10-6 Max. (40 MHz<f0≦50 MHz)
±0.1 ×10-6 Max. (10 MHz≦f0≦40 MHz)
±0.2 ×10-6 Max. (40 MHz<f0≦50 MHz)
±0.02 ×10-6 Max.
(Please contact us about suffix)
Option5
(Please contact us about suffix)
Frequency/load coefficient
Frequency/voltage coefficient
Frequency aging *2
f0-Load
f0-VCC
f_age
Load ±10 %
VCC ±5%
+25 °C, 24h
+25 °C, First year
±1.0 ×10-6 Max.
5.0 mA Max. / 6.0 mA Max.
6.0 mA Max. / 8.0 mA Max.
8.0 mA Max. / 10.0 mA Max.
10 MHz≦f0≦26 MHz (3.3V / 5.0V)
26 MHz<f0≦40 MHz (3.3V / 5.0V)
40 MHz<f0≦50 MHz (3.3V / 5.0V)
VC- GND (DC)
D :VC=1.5 V ± 1.0 V at VCC=3.3 V
E: VC=1.65 V ± 1.0 V at VCC=3.3 V
H: VC=2.5 V ± 2.0 V at VCC=5.0 V
Current consumption
Input resistance
ICC
Rin
5.0 mA Max.
100 kΩ Min.
100 kΩ Min.
―
―
―
―
―
―
±5 ×10-6 to
±5 ×10-6 to
Frequency control range
f_cont
±10 ×10-6
±10 ×10-6
Frequency change polarity
Symmetry
―
Positive polarity
Positive polarity
SYM
VOH
VOL
45 % to 55 %
―
―
―
GND level (DC cut)
90 % VCC Min.
10 % VCC Max.
―
Output voltage
Output level
VPP
0.8 V Min.
Peak to Peak
Start-up time
Output load condition
t_str
Load
5.0 ms Max.
T=0 at 90% Vcc
15 pF
10 kΩ//10 pF
* Note : Please contact us for requirements not listed in this specification. *1 Based on frequency at (fmax+fmin)/2. *2 After 48 hours operating
Product Name
(Standard form)
TG5032 C DN 19.200000MHz
C
A
A
N
D A
①
②
③
④ ⑤ ⑥ ⑦ ⑧ ⑨
①Model ②Output (C: CMOS, S: Clipped sine wave) ③Frequency ④Supply voltage (C: 3.3 V Typ.)
⑤Frequency / temperature characteristics (A: ±0.1 × 10-6 Max.) ⑥Operating temperature (A: 0 °C to +70 °C)
⑦OE function (N: Non) ⑧VC function (A: VC =any, D: VC =1.5 V, E: VC =1.65 V, H: VC =2.5 V, N: Non)
⑨Internal identification code (“A” is default)
External dimensions
(Unit :mm)
Footprint (Recommended) (Unit :mm)
#3
#4
1.10
#3
#4
Marking
#2
#1
0.30
5.00±0.2
Pin map
Connection
Pin
#2
#1
0.75
#2
VC-TCXO
VC
TCXO
N.C
1
2
3
4
4.40
#1
#4
GND
OUT
VCC
To maintain stable operation, provide a 0.1 μF by-pass capacitor at
a location as near as possible to the power source terminal of the
crystal product (between VCC - GND).
#3