Datasheet > TFZT651

TFZT651

更新时间： 2024-04-09 19:01:02

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	379K
描述
60V,3A,General Purpose NPN Bipolar Transistor

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TFZT651 数据手册

NPN Silicon Epitaxial Planar Transistor

TFZT651

Features



Epitaxial planar die construction

Low saturation voltage

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

FZT651

TFZT651

4000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

I_CM

Thermal Characteristics

Parameter

Power Dissipation( T_A= 25°C )

Thermal Resistance (Junction-to-Ambient)

Junction Temperature

Symbol

P_D

Value

Unit

C/W

°C

R_θJA

T_J

62.5

-55 ~ +150

Storage Temperature Range

T_STG

°C

STM0675A: March 2023 [1.1]

www.gmesemi.com

12 3 4

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