5秒后页面跳转
TFP7N65 PDF预览

TFP7N65

更新时间: 2024-11-29 08:49:47
品牌 Logo 应用领域
TAK_CHEONG 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 312K
描述
N-Channel Power MOSFET 7.2A, 650V, 1.5Ω

TFP7N65 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N雪崩能效等级(Eas):274 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):7.2 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):28.8 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TFP7N65 数据手册

 浏览型号TFP7N65的Datasheet PDF文件第2页浏览型号TFP7N65的Datasheet PDF文件第3页浏览型号TFP7N65的Datasheet PDF文件第4页浏览型号TFP7N65的Datasheet PDF文件第5页浏览型号TFP7N65的Datasheet PDF文件第6页浏览型号TFP7N65的Datasheet PDF文件第7页 
®
TAK CHEONG  
SEMICONDUCTOR  
N-Channel Power MOSFET  
7.2A, 650V, 1.5  
1 = Gate  
2 = Drain  
3 = Source  
General Description  
1
The N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. This advanced  
technology has been especially tailored to minimize on-state  
resistance, provide superior switching performance. This  
device is well suited for high efficiency switched mode power  
suppliers, active power factor correction, electronic lamp  
ballasts based half bridge topology.  
2
3
TO-220AB  
DEVICE MARKING DIAGRAM  
L xxyy  
TFP  
XXXX  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
TFPXXXX = Device Type  
D
Features  
Robust high voltage termination  
Avalanche energy specified  
Diode is characterized for use in bridge circuits  
Source to Drain diode recovery time comparable to a  
discrete fast recovery diode.  
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )  
Symbol  
Parameter  
Drain- Source Voltage  
Value  
650  
±30  
7.2  
Units  
V
V
V
DSS  
V
Gate-Source Voltage  
GSS  
I
Drain Current  
A
D
I
Drain Current Pulsed  
28.8  
137  
1.1  
A
DM  
Power Dissipation  
(Note 2)  
W
P
D
Derating factor above 25℃  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Operating Junction Temperature  
Storage Temperature Range  
W/℃  
mJ  
mJ  
E
E
(Note 1)  
(Note 2)  
274  
13.7  
150  
AS  
AR  
T
J
T
- 55 to +150  
stg  
Notes:  
1. L=9mH, I =7.2A, V =50V, R =50Ω, Starting T =25℃  
AS  
DD  
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
0.91  
Unit  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
R
θJC  
62.5  
θJA  
Number: DB-187  
March 2010, Revision B  
Page 1  

与TFP7N65相关器件

型号 品牌 获取价格 描述 数据表
TFP830 TAK_CHEONG

获取价格

N-Channel Power MOSFET 4.5A, 500V, 1.50Ω
TFP840 TAK_CHEONG

获取价格

N-Channel Power MOSFET 8A, 500V, 0.9Ω
TFP8N60 TAK_CHEONG

获取价格

N-Channel Power MOSFET 8A, 600V, 1.0Ω
TFP-AA-10T-13 DIALIGHT

获取价格

Tactical Composite Front Park Turn Light
TFP-AA-13T-13 DIALIGHT

获取价格

Tactical Composite Front Park Turn Light
TFPCD27 COOPER

获取价格

Circuit Protection Solutions Low Voltage Fuse Links Catalogue
TFPCD33 COOPER

获取价格

Circuit Protection Solutions Low Voltage Fuse Links Catalogue
TFPCDO1 COOPER

获取价格

Circuit Protection Solutions Low Voltage Fuse Links Catalogue
TFPCDO2 COOPER

获取价格

Circuit Protection Solutions Low Voltage Fuse Links Catalogue
TF-PCM-5893-A10 AAEON

获取价格

Onboard AMD Geode™ GX 466/ 500 (Optional)/