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TFP7N65 PDF预览

TFP7N65

更新时间: 2024-01-05 20:27:13
品牌 Logo 应用领域
TAK_CHEONG 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 312K
描述
N-Channel Power MOSFET 7.2A, 650V, 1.5Ω

TFP7N65 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N雪崩能效等级(Eas):274 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:650 V
最大漏极电流 (ID):7.2 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):28.8 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TFP7N65 数据手册

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®
TAK CHEONG  
SEMICONDUCTOR  
N-Channel Power MOSFET  
7.2A, 650V, 1.5  
1 = Gate  
2 = Drain  
3 = Source  
General Description  
1
The N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. This advanced  
technology has been especially tailored to minimize on-state  
resistance, provide superior switching performance. This  
device is well suited for high efficiency switched mode power  
suppliers, active power factor correction, electronic lamp  
ballasts based half bridge topology.  
2
3
TO-220AB  
DEVICE MARKING DIAGRAM  
L xxyy  
TFP  
XXXX  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
TFPXXXX = Device Type  
D
Features  
Robust high voltage termination  
Avalanche energy specified  
Diode is characterized for use in bridge circuits  
Source to Drain diode recovery time comparable to a  
discrete fast recovery diode.  
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )  
Symbol  
Parameter  
Drain- Source Voltage  
Value  
650  
±30  
7.2  
Units  
V
V
V
DSS  
V
Gate-Source Voltage  
GSS  
I
Drain Current  
A
D
I
Drain Current Pulsed  
28.8  
137  
1.1  
A
DM  
Power Dissipation  
(Note 2)  
W
P
D
Derating factor above 25℃  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Operating Junction Temperature  
Storage Temperature Range  
W/℃  
mJ  
mJ  
E
E
(Note 1)  
(Note 2)  
274  
13.7  
150  
AS  
AR  
T
J
T
- 55 to +150  
stg  
Notes:  
1. L=9mH, I =7.2A, V =50V, R =50Ω, Starting T =25℃  
AS  
DD  
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
0.91  
Unit  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
R
θJC  
62.5  
θJA  
Number: DB-187  
March 2010, Revision B  
Page 1  

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