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TFP70N06 PDF预览

TFP70N06

更新时间: 2024-09-28 08:49:47
品牌 Logo 应用领域
TAK_CHEONG /
页数 文件大小 规格书
8页 316K
描述
N-Channel Power MOSFET 70A, 60V, 0.014Ω

TFP70N06 数据手册

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®
TAK CHEONG  
SEMICONDUCTOR  
N-Channel Power MOSFET  
70A, 60V, 0.014  
1 = Gate  
2 = Drain  
3 = Source  
1
2
GENERAL DESCRIPTION  
3
This N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. This advanced  
technology has been especially tailored to minimize on-state  
resistance, provide superior switching performance. This  
device is well suited for high efficiency switched mode power  
suppliers, active power factor correction, electronic lamp  
ballasts based half bridge topology.  
TO-220AB  
DEVICE MARKING DIAGRAM  
L xxyy  
TFP  
XXXX  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
TFPXXXX = Device Type  
D
FEATURES  
Avalanche energy specified  
Gate Charge (Typical 70nC)  
High Ruggedness  
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )  
Symbol  
Parameter  
Value  
60  
Units  
V
V
Drain- Source Voltage  
DSS  
V
±25  
70  
Gate-Source Voltage  
V
GSS  
I
Drain Current  
A
D
I
Drain Current Pulsed  
280  
158  
1.05  
800  
7.0  
A
DM  
Power Dissipation  
(Note 2)  
W
P
D
Derating Factor above 25℃  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction Temperature  
Storage Temperature Range  
W/℃  
mJ  
V/ns  
E
(Note 1)  
(Note 3)  
AS  
dv/dt  
T
J
150  
T
- 55 to +150  
stg  
Notes:  
1. L=250uH, I =70A, V =25V, R =0Ω, Starting T =25℃.  
AS  
DD  
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
3. I 70A, di/dt 300A/us, V BV , Starting T =25℃.  
SD  
DD  
DSS  
J
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
0.95  
Unit  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
R
θJC  
62.5  
θJA  
Number: DB-229  
August 2011, Revision A  
Page 1  

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