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TFF740 PDF预览

TFF740

更新时间: 2024-09-19 08:49:51
品牌 Logo 应用领域
TAK_CHEONG /
页数 文件大小 规格书
7页 271K
描述
N-Channel Power MOSFET 10A, 400V, 0.55Ω

TFF740 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.84
雪崩能效等级(Eas):680 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.55 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON

TFF740 数据手册

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®
TAK CHEONG  
SEMICONDUCTOR  
N-Channel Power MOSFET  
10A, 400V, 0.55  
1 = Gate  
2 = Drain  
3 = Source  
1
General Description  
2
3
The N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. This advanced  
technology has been especially tailored to minimize on-state  
resistance, provide superior switching performance. This  
device is well suited for high efficiency switched mode power  
suppliers, active power factor correction, electronic lamp  
ballasts based half bridge topology.  
TO-220AB  
DEVICE MARKING DIAGRAM  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
TFFXXXX = Device Type  
L xxxx  
TFF  
XXXX  
Features  
D
Robust high voltage termination  
Avalanche energy specified  
Diode is characterized for use in bridge circuits  
Source to Drain diode recovery time comparable to a  
discrete fast recovery diode.  
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )  
Symbol  
Parameter  
Drain- Source Voltage  
Value  
400  
±30  
10  
Units  
V
V
V
DSS  
V
Gate-Source Voltage  
GSS  
I
Drain Current  
A
D
I
Drain Current Pulsed  
40  
A
DM  
Power Dissipation  
(Note 2)  
125  
1.0  
W
P
D
Derating factor above 25℃  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Operating Junction Temperature  
Storage Temperature Range  
W/℃  
mJ  
mJ  
E
E
(Note 1)  
(Note 2)  
680  
12.5  
150  
AS  
AR  
T
J
T
- 55 to +150  
stg  
Notes:  
1. L=18.5mH, I =10A, V =50V, R =50Ω, Starting T =25℃  
AS  
DD  
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
1
Unit  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
R
θJC  
62  
θJA  
Number: DB-203  
March 2010, Revision B  
Page 1  

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