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TFF50N06 PDF预览

TFF50N06

更新时间: 2024-09-19 12:20:31
品牌 Logo 应用领域
TAK_CHEONG /
页数 文件大小 规格书
8页 309K
描述
N-Channel Power MOSFET 28A, 60V, 0.023Ω

TFF50N06 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76雪崩能效等级(Eas):643 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):28 A
最大漏源导通电阻:0.023 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):112 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TFF50N06 数据手册

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®
TAK CHEONG  
SEMICONDUCTOR  
N-Channel Power MOSFET  
28A, 60V, 0.023  
1 = Gate  
2 = Drain  
3 = Source  
1
2
3
GENERAL DESCRIPTION  
The N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. This advanced  
technology has been especially tailored to minimize on-state  
resistance, provide superior switching performance. This  
device is well suited for high efficiency switched mode power  
suppliers, active power factor correction, electronic lamp  
ballasts based half bridge topology.  
TO-220FP  
DEVICE MARKING DIAGRAM  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
TFFXXXX = Device Type  
L xxxx  
TFF  
XXXX  
D
FEATURES  
Avalanche energy specified  
Gate Charge (Typical 36nC)  
G
High Ruggedness  
.
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )  
Symbol  
Parameter  
Value  
60  
Units  
V
V
Drain- Source Voltage  
DSS  
V
±25  
28  
Gate-Source Voltage  
V
GSS  
I
Drain Current  
A
D
I
Drain Current Pulsed  
112  
47  
A
DM  
Power Dissipation  
(Note 2)  
W
P
D
Derating Factor above 25℃  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction Temperature  
Storage Temperature Range  
0.31  
643  
4.7  
W/℃  
mJ  
mJ  
V/ns  
E
E
(Note 1)  
(Note 2)  
AS  
AR  
dv/dt  
7.0  
T
J
150  
T
- 55 to +150  
stg  
Notes:  
1. L=300uH, I =50A, V =25V, R =50Ω, Starting T =25℃  
AS  
DD  
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
3. I 50A, di/dt 300A/us, V BV , Starting T =25℃  
SD  
DD  
DSS  
J
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
3.22  
Unit  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
R
θJC  
62.5  
θJA  
Number: DB-230  
August 2011, Revision A  
Page 1  

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