TFF4N60

更新时间： 2024-11-08 08:49:51

品牌	Logo	应用领域
TAK_CHEONG		/
页数	文件大小	规格书
8页	327K
描述
N-Channel Power MOSFET 4.1A, 600V, 2.5Ω

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TFF4N60 数据手册

TAK CHEONG

SEMICONDUCTOR

N-Channel Power MOSFET

4.1A, 600V, 2.5Ω

1 = Gate

2 = Drain

3 = Source

General Description

The N-Channel MOSFET is used an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. This advanced

technology has been especially tailored to minimize on-state

resistance, provide superior switching performance. This

device is well suited for high efficiency switched mode power

suppliers, active power factor correction, electronic lamp

ballasts based half bridge topology.

TO-220FP

DEVICE MARKING DIAGRAM

L = Tak Cheong Logo

xxyy = Monthly Date Code

TFFXXXX = Device Type

L xxxx

TFF

XXXX

Features

●

Robust high voltage termination

Avalanche energy specified

Diode is characterized for use in bridge circuits

Source to Drain diode recovery time comparable to a

discrete fast recovery diode.

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise noted )

Symbol

Parameter

Drain- Source Voltage

Value

600

±30

4.1

Units

DSS

Gate-Source Voltage

GSS

Drain Current

Drain Current Pulsed

16.4

Power Dissipation

(Note 2)

Derating factor above 25℃

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Operating Junction Temperature

Storage Temperature Range

0.31

330

7.3

W/℃

℃

(Note 1)

(Note 2)

150

- 55 to +150

℃

stg

Notes:

1. L=30mH, I =4.4A, V =85V, R =25Ω, Starting T =25℃

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

3.18

Unit

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

62.5

θJA

Number: DB-196

July 2011, Revision C

Page 1

12 3 4 5 6 7 8

中文翻译

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