5秒后页面跳转
TFF2N60 PDF预览

TFF2N60

更新时间: 2024-09-19 08:49:51
品牌 Logo 应用领域
TAK_CHEONG /
页数 文件大小 规格书
7页 302K
描述
N-Channel Power MOSFET 2A, 600V, 4.6Ω

TFF2N60 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.72
雪崩能效等级(Eas):120 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):2 A最大漏源导通电阻:4.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):8 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TFF2N60 数据手册

 浏览型号TFF2N60的Datasheet PDF文件第2页浏览型号TFF2N60的Datasheet PDF文件第3页浏览型号TFF2N60的Datasheet PDF文件第4页浏览型号TFF2N60的Datasheet PDF文件第5页浏览型号TFF2N60的Datasheet PDF文件第6页浏览型号TFF2N60的Datasheet PDF文件第7页 
®
TAK CHEONG  
SEMICONDUCTOR  
N-Channel Power MOSFET  
2A, 600V, 4.6  
1 = Gate  
1
2 = Drain  
3 = Source  
2
General Description  
3
The N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. This advanced  
technology has been especially tailored to minimize on-state  
resistance, provide superior switching performance. This  
device is well suited for high efficiency switched mode power  
suppliers, active power factor correction, electronic lamp  
ballasts based half bridge topology.  
TO-220FP  
DEVICE MARKING DIAGRAM  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
TFFXXXX = Device Type  
L xxxx  
TFF  
XXXX  
Features  
D
Robust high voltage termination  
Avalanche energy specified  
Diode is characterized for use in bridge circuits  
Source to Drain diode recovery time comparable to a  
discrete fast recovery diode.  
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )  
Symbol  
Parameter  
Drain- Source Voltage  
Value  
600  
±30  
2.0  
Units  
V
V
V
DSS  
V
Gate-Source Voltage  
GSS  
I
Drain Current  
A
D
I
Drain Current Pulsed  
8.0  
A
DM  
Power Dissipation  
(Note 2)  
23  
W
P
D
Derating factor above 25℃  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Operating Junction Temperature  
Storage Temperature Range  
0.18  
120  
5.4  
W/℃  
mJ  
mJ  
E
E
(Note 1)  
(Note 2)  
AS  
AR  
T
150  
J
T
- 55 to +150  
stg  
Notes:  
1. L=56mH, I =2.0A, V =50V, R =25Ω, Starting T =25℃  
AS  
DD  
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
5.5  
Unit  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
R
θJC  
62.5  
θJA  
Number: DB-193  
March 2010, Revision B  
Page 1  

与TFF2N60相关器件

型号 品牌 获取价格 描述 数据表
TFF2N60A TAK_CHEONG

获取价格

N-Channel Power MOSFET 2.1A, 600V, 5.6Ω
TFF2N65 TAK_CHEONG

获取价格

N-Channel Power MOSFET 1.9A, 650V, 7.5Ω
TFF4N60 TAK_CHEONG

获取价格

N-Channel Power MOSFET 4.1A, 600V, 2.5Ω
TFF4N65 TAK_CHEONG

获取价格

N-Channel Power MOSFET 3.9A, 650V, 3.0Ω
TFF50N06 TAK_CHEONG

获取价格

N-Channel Power MOSFET 28A, 60V, 0.023Ω
TFF5N60 TAK_CHEONG

获取价格

N-Channel Power MOSFET 4.5A, 600V, 2.4Ω
TFF5SP0040C CK-COMPONENTS

获取价格

Miniature Snap-acting Switches
TFF730 TAK_CHEONG

获取价格

N-Channel Power MOSFET 5.5A, 400V, 0.95Ω
TFF740 TAK_CHEONG

获取价格

N-Channel Power MOSFET 10A, 400V, 0.55Ω
TFF7N60 TAK_CHEONG

获取价格

N-Channel Power MOSFET 7A, 600V, 1.2Ω