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TFF10N60 PDF预览

TFF10N60

更新时间: 2024-11-08 12:20:31
品牌 Logo 应用领域
TAK_CHEONG 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 3283K
描述
N-Channel Power MOSFET 10A, 600V, 0.75Ω

TFF10N60 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N雪崩能效等级(Eas):300 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.75 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TFF10N60 数据手册

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®
TAK CHEONG  
SEMICONDUCTOR  
N-Channel Power MOSFET  
10A, 600V, 0.75Ω  
1
1 = Gate  
2 = Drain  
3 = Source  
2
GENERAL DESCRIPTION  
3
The N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. This advanced  
technology has been especially tailored to minimize on-state  
resistance, provide superior switching performance. This  
device is well suited for high efficiency switched mode power  
suppliers, active power factor correction, electronic lamp  
ballasts based half bridge topology.  
TO-220FP  
DEVICE MARKING DIAGRAM  
L = Tak Cheong Logo  
xxyy = Monthly Date Code  
TFFXXXX = Device Type  
L xxxx  
TFF  
XXXX  
FEATURES  
D
Robust high voltage termination  
Avalanche energy specified  
Diode is characterized for use in bridge circuits  
Source to Drain diode recovery time comparable to a  
discrete fast recovery diode.  
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )  
Symbol  
Parameter  
Value  
600  
±20  
10  
Units  
V
DSS  
Drain- Source Voltage  
V
V
V
Gate-Source Voltage  
GSS  
Drain Current  
A
I
D
Continuous Drain Current Tc=100℃  
Drain Current Pulsed  
6.4  
A
I
40  
A
DM  
Power Dissipation  
(Note 2)  
45  
W
P
D
Derating Factor above 25℃  
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
Operating Junction Temperature  
Storage Temperature Range  
0.36  
300  
30  
W/℃  
mJ  
mJ  
E
E
(Note 1)  
(Note 2)  
AS  
AR  
T
150  
J
T
- 55 to +150  
stg  
Notes:  
1. L=10mH, I =8.0A, V =50V, R =50Ω, Starting T =25℃  
AS  
DD  
G
J
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Value  
2.78  
62  
Unit  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
R
θJC  
θJA  
R
Number: DB-221  
May 2010, Revision A  
Page 1  

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