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TFD312S-M

更新时间: 2024-11-10 03:38:11
品牌 Logo 应用领域
急速微 - ALLEGRO 局域网栅极
页数 文件大小 规格书
1页 75K
描述
Silicon Controlled Rectifier, 4.7A I(T)RMS, 145V V(DRM), 145V V(RRM), 1 Element, TO-220AB, TO-220F, 3 PIN

TFD312S-M 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.84
其他特性:BUILT-IN AVALANCHE DIODE最大转折电压:187 V
最小转折电压:163 V外壳连接:ISOLATED
配置:SINGLE最大直流栅极触发电流:15 mA
最大直流栅极触发电压:1 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-10 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:4.7 A
断态重复峰值电压:145 V重复峰值反向电压:145 V
子类别:Breakover Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SCRBase Number Matches:1

TFD312S-M 数据手册

  
3-1 Thyristors  
3-1-2  
3-Terminal Thyristor with built-in Reverse  
Diode for HID Lamp Ignition  
3-1-3  
Thyristors with Built-in Avalanche Diode  
VDRM  
(V)  
ITRM  
(A)  
di/dt  
(A/µs)  
1200  
VBO  
VDRM  
(V)  
IT(AV)  
(A)  
Part No.  
TFC561D  
Package  
TO-220S  
Fig. No.  
1
Part No.  
Package  
Fig. No.  
(V)  
600  
430  
TFD312S-C  
TFD312S-F  
TFD312S-G  
TFD312S-J  
TFD312S-K  
TFD312S-L  
TFD312S-M  
TFD312S-N  
TFD312S-O  
30±3  
20  
55±5  
35  
65±5  
45  
100±10  
125±10  
150±10  
175±12  
200±15  
225±15  
80  
100  
120  
145  
170  
190  
3
TO-220F  
2
External Dimensions  
• No. 1  
• No. 2  
4.2±0.2  
2.8±0.2  
0.2  
10.0±  
C0.5  
4.44±0.2  
10.2±0.3  
1.3±0.2  
±0.2  
φ
3.3  
a
b
1.2±0.2  
2.59±0.2  
1.27±0.2  
1.35±0.15  
+0.2  
0.1  
0.86  
0.76±0.1  
1.35±0.15  
+0.2  
0.1  
0.85  
+0.2  
0.1  
2.4±0.2  
0.45  
2.54  
2.54  
2.2±0.2  
2.54±0.5  
2.54±0.5  
Terminal No.  
0.4±0.1  
a. Part No.  
b. Lot No.  
(1) (2) (3)  
(1)  
(2)  
(3)  
Cathode (K)  
Anode (A)  
Gate (G)  
(1)(2)(3)  
Terminal No.  
(1)  
(2)  
(3)  
Cathode (K)  
Anode (A)  
Gate (G)  
(unit: mm)  
35  

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