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TFD120 PDF预览

TFD120

更新时间: 2024-09-17 20:06:43
品牌 Logo 应用领域
DYNEX 局域网开关晶体管
页数 文件大小 规格书
10页 132K
描述
Power Bipolar Transistor, 120A I(C), 1-Element, NPN, Silicon, HERMETIC SEALED PACKAGE-3

TFD120 技术参数

生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, O-XUFM-X3
针数:3Reach Compliance Code:unknown
风险等级:5.77最大集电极电流 (IC):120 A
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):150
JESD-30 代码:O-XUFM-X3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:TIN端子形式:UNSPECIFIED
端子位置:UPPER晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TFD120 数据手册

 浏览型号TFD120的Datasheet PDF文件第2页浏览型号TFD120的Datasheet PDF文件第3页浏览型号TFD120的Datasheet PDF文件第4页浏览型号TFD120的Datasheet PDF文件第5页浏览型号TFD120的Datasheet PDF文件第6页浏览型号TFD120的Datasheet PDF文件第7页 
DTD/TFD120/200  
Superswitch Powerline NPN Darlington Transistor  
Replaces November 1999 version, DS5265-2.0  
DS5265-3.0 September 2000  
APPLICATIONS  
KEY PARAMETERS  
VCEO(SUS)  
VCEX  
IC(CONT)  
IC(PK)  
450V  
600V  
120/200A  
200/300A  
2.0µs  
High frequency inverters  
Power supplies  
Aircraft power supplies  
Motor controls  
tf  
FEATURES  
Monolithic darlington  
Triple diffused  
High power capability  
Thermal fatigue free compression bonded structure  
Fast switching, speed up diode  
Hermetic high mount down packing density and  
convenient bolt down packages  
C
B
Package outline  
type code: E  
Package outline  
type code: TFD  
See Package Details for information.  
E
Fig.2 Package outlines  
Fig.1 Darlington circuit configuration  
RATINGS  
Symbol  
VCEX  
Parameter  
Test Conditions  
DTD/TFD120  
DTD/TFD200  
Units  
V
Collector-emitter voltage  
Emitter-base voltage  
Continuous collector current  
Continuous base current  
Peak collector current  
Power dissipation  
-
600  
5
600  
5
VEBO  
-
V
IC(CONT)  
IB(CONT)  
IC(PK)  
-
120  
4
200  
4
A
-
A
-
200  
1.5  
300  
1.5  
A
Ptot  
Tcase = 25oC  
kW  
1/10  
www.dynexsemi.com  

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