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TF861S PDF预览

TF861S

更新时间: 2024-09-15 22:19:51
品牌 Logo 应用领域
三垦 - SANKEN 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
2页 51K
描述
TO-220F 8A Thyristor

TF861S 技术参数

是否Rohs认证: 不符合生命周期:Not Recommended
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.2
Is Samacsys:N其他特性:UL APPROVED
外壳连接:ISOLATED配置:SINGLE
最大直流栅极触发电流:15 mA最大直流栅极触发电压:1.5 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:2 mA
通态非重复峰值电流:120 A元件数量:1
端子数量:3最大通态电流:8000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:12.56 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

TF861S 数据手册

 浏览型号TF861S的Datasheet PDF文件第2页 
TO-220F 8A Thyristor  
TF821S, TF841S, TF861S  
Features  
Repetitive peak off-state voltage: VDRM=200, 400, 600V  
External Dimensions  
±0.2  
4.2  
2.8  
±0.2  
±0.2  
(Unit: mm)  
φ
10.0  
3.3  
C0.5  
Average on-state current: IT(AV)=8A  
Gate trigger current: IGT=15mA max  
a
b
Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)  
UL approved type available  
±0.15  
1.35  
±0.15  
1.35  
0.85  
+0.2  
0.1  
+0.2  
0.1  
±0.2  
2.54  
2.54 0.45  
2.4  
±0.2  
2.2  
(1). Cathode(K)  
(2). Anode(A)  
(3). Gate(G)  
a. Part Number  
b. Lot Number  
(1) (2) (3)  
Weight: Approx. 2.1g  
Absolute Maximum Ratings  
Ratings  
Parameter  
Symbol  
Unit  
Conditions  
TF821S TF841S TF861S  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
Non-repetitive peak off-state voltage  
Non-repetitive peak reverse voltage  
Average on-state current  
RMS on-state current  
VDRM  
VRRM  
VDSM  
VRSM  
IT(AV)  
IT(RMS)  
ITSM  
200  
200  
300  
300  
400  
400  
600  
600  
700  
700  
V
V
Tj=40 to +125°C, RGK=1kΩ  
500  
V
500  
V
8.0  
A
50Hz Half-cycle sinewave, Continuous current, Tc=87°C  
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C  
12.6  
A
Surge on-state current  
120  
A
Peak forward gate current  
Peak forward gate voltage  
Peak reverse gate voltage  
Peak gate power loss  
IFGM  
2.0  
A
f
50Hz, duty 10%  
VFGM  
VRGM  
PGM  
10  
V
5.0  
V
f
f
50Hz  
5.0  
W
W
°C  
°C  
V
50Hz, duty 10%  
Average gate power loss  
Junction temperature  
PG(AV)  
Tj  
0.5  
40 to +125  
40 to +125  
1500  
Storage temperature  
Tstg  
VISO  
Isolation voltage  
50Hz Sine wave, RMS, Terminal to Case, 1 min.  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Unit  
Conditions  
min  
max  
2.0  
2.0  
1.4  
1.5  
15  
mA  
mA  
V
Off-state current  
IDRM  
IRRM  
VTM  
VGT  
IGT  
Tj=125°C, VD=VDRM(VRRM), RGK=1k  
TC=25°C, ITM=15A  
Reverse current  
On-state voltage  
Gate trigger voltage  
Gate trigger current  
Gate non-trigger voltage  
Holding current  
V
VD=6V, RL=10, TC=25°C  
5.0  
mA  
V
VGD  
IH  
0.1  
VD=1/2×VDRM, Tj=125°C, RGK=1kΩ  
RGK=1k, Tj=25°C  
4.0  
50  
30  
mA  
V/µS  
µS  
Critical rate-of-rise of off-state voltage  
Turn-off time  
dv/dt  
tq  
VD=1/2×VDRM, Tj=125°C, RGK=1k, CGK=0.033µF  
Tc=25°C  
Junction to case  
Thermal resistance  
Rth  
3.6  
°C/W  
16  

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