Datasheet > TF809-1200-16

TF809-1200-16

更新时间： 2024-11-07 02:51:35

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描述
High Power Semiconductor Devices

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数据手册

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TF809-1200-16 数据手册

1-21

High Power Semiconductor Devices

Fast Switching Thyristor

TF80ꢀ 1200-1ꢁ-20

Key Parameters

Voltage Ratings

V _DRM

I _T(AV)

I _TSM

V _TO

r _T

~ 2000

1205

1600

Device Type V_DRM/V_RRM(V)

Test Conditions

1.38

1600

1800

2000

T _j=125 °C

I _DRM= I _RRM

T _j= 25 °C

I _DRM= I _RRM

V _DM= V _DRM

1200-16

1200-18

1200-20

TF809

0.385

≤

mΩ

150 mA

≤

5 mA

V _RM= V _RRM

Applications

t_p= 10 ms

M.F. Inductive heating systems

DC choppers

V _DSM= V _DRM

V _RSM= V _RRM

Pulse electrical power supplies

Features

Outline

Double-side cooling

Low switching loss

Shorter turn-off time

Thermal & Mechanical Data

Symb.

Parameter

Thermal Resistance

Junction to Case

Thermal Resistance

Case ro Heatsink

Junction Temperature

Storage Temperature

Mounting Force

Max Unit

Min Type

R _jc

K / W

0.020

R _cs

K / W

0.005

°C

T _j

T _stg

125

150

-40

0.47

Weight

Current Ratings

Symb.

I _T(AV)

Parameter

Test Conditions

Min

Type

Max

1205

1018

1600

Unit

Mean On-State Current

Half Sine Wave, T_C=55 ^oC

Half Sine Wave, T_C=70 ^oC

T_C=70 ^oC

I _T(AV)

I _T(RMS)RMS On-State Current

I _TSM

I ²t

Surge (non-repetitive) On-State Current

Limiting load integral

10ms, Half Sine Wave, T_C=125 ^oC, V_R= 0

10⁴A²s

Sine Wave, 10ms

113

Greegoo Electric 5.2008

12 3 4

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