TF321S

更新时间： 2024-10-29 22:19:51

品牌	Logo	应用领域
三垦 - SANKEN		栅极局域网
页数	文件大小	规格书
1页	33K
描述
TO-220F 3A Thyristor

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中文翻译

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数据手册
替代型号

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TF321S 数据手册

TO-220F 3A Thyristor

TF321S, TF341S, TF361S

■Features

●Repetitive peak off-state voltage: V_DRM=200, 400, 600V

External Dimensions

±0.2

4.2

2.8

±0.2

(Unit: mm)

10.0

3.3

C0.5

●Average on-state current: I_T(AV)=3A

●Gate trigger current: I_GT=15mA max

●Isolation voltage: V_ISO=1500V(50Hz Sine wave, RMS)

±0.15

1.35

±0.15

1.35

0.85

+0.2

–0.1

+0.2

–0.1

±0.2

2.54

2.54 0.45

2.4

±0.2

2.2

(1). Cathode(K)

(2). Anode(A)

(3). Gate(G)

a. Part Number

b. Lot Number

(1) (2) (3)

Weight: Approx. 2.1g

■Absolute Maximum Ratings

Ratings

Parameter

Symbol

Unit

Conditions

TF321S TF341S TF361S

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

RMS on-state current

V_DRM

V_RRM

V_DSM

V_RSM

I_T(AV)

I_{T (RMS)}

I_TSM

200

300

400

600

700

400

Tj=–40 to +125°C, R_GK=1kΩ

500

3.0

50Hz Half-cycle sinewave, Continuous current, Tc=93°C

50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C

4.7

Surge on-state current

2.0

Peak forward gate current

Peak forward gate voltage

Peak reverse gate voltage

Peak gate power loss

I_FGM

50Hz, duty 10%

V_FGM

V_RGM

P_GM

5.0

50Hz

5.0

°C

50Hz, duty 10%

Average gate power loss

Junction temperature

P_G(AV)

0.5

–40 to +125

1500

Storage temperature

Tstg

V_ISO

Isolation voltage

50Hz Sine wave, RMS, Terminal to Case, 1 min.

■Electrical Characteristics

Ratings

typ

Parameter

Symbol

Unit

Conditions

min

max

2.0

1.4

1.5

Off-state current

I_DRM

I_RRM

V_TM

V_GT

I_GT

Tj=125°C, V_D=V_DRM(V_RRM), R_GK=1kΩ

T_C=25°C, I_TM=5A

Reverse current

On-state voltage

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Holding current

0.7

3.0

V_D=6V, R_L=10Ω, T_C=25°C

V_GD

I_H

0.1

V_D=1/2×V_DRM, Tj=125°C, R_GK=1kΩ

R_GK=1kΩ, Tj=25°C

5.0

V/µS

µS

Critical rate-of-rise of off-state voltage

Turn-off time

dv/dt

V_D=1/2×V_DRM, Tj=125°C, R_GK=1kΩ, C_GK=0.033µF

Tc=25°C

Junction to case

Thermal resistance

Rth

5.0

°C/W

中文翻译

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TF321S 替代型号

型号	品牌	替代类型	描述	数据表
TF341M	SANKEN	功能相似	TO-220 3A Thyristor

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