Datasheet > TEKT5400S_08

TEKT5400S_08

更新时间： 2024-11-15 05:55:35

品牌	Logo	应用领域
威世 - VISHAY		晶体光电晶体管光电晶体管
页数	文件大小	规格书
6页	582K
描述
Silicon NPN Phototransistor, RoHS Compliant

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TEKT5400S_08 数据手册

TEKT5400S

Vishay Semiconductors

Silicon NPN Phototransistor, RoHS Compliant

FEATURES

• Package type: leaded

• Package form: side view lens

• Dimensions (L x W x H in mm): 5 x 2.65 x 5

• High radiant sensitivity

• Daylight blocking filter matched with 940 nm

emitters

• Fast response times

16733

• Angle of half sensitivity: ϕ = 37°

• Package matched with IR emitter series TSKS5400S

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/96/EC

DESCRIPTION

TEKT5400S is a silicon NPN phototransistor with high

radiant sensitivity, molded in a plastic package with side view

lens and daylight blocking filter. Filter bandwidth is matched

with 950 nm IR emitters.

APPLICATIONS

• Detector in electronic control and drive circuits

PRODUCT SUMMARY

COMPONENT

I_ca(mA)

ϕ (deg)

λ_0.5(nm)

TEKT5400S

850 to 980

Note

Test condition see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TEKT5400S

Bulk

MOQ: 2000 pcs, 2000 pcs/bulk

Side view lens

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

V_CEO

V_ECO

I_C

VALUE

UNIT

Collector emitter voltage

Emitter collector voltage

Collector current

100

°C

Collector peak current

t_p/T ≤ 0.5, t_p≤ 10 ms

T_amb≤ 40 °C

I_CM

200

Power dissipation

P_V

150

Junction temperature

T_j

100

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

- 40 to + 85

- 40 to + 100

260

°C

t ≤ 5 s

T_sd

°C

Thermal resistance junction/ambient

J-STD-051, soldered on PCB

R_thJA

270

K/W

Note

_amb= 25 °C, unless otherwise specified

Document Number: 81569

Rev. 1.5, 08-Sep-08

For technical questions, contact: detectortechsupport@vishay.com

www.vishay.com

431

12 3 4 5 6

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