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TE28F400CVT80 PDF预览

TE28F400CVT80

更新时间: 2024-11-12 22:42:23
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
57页 655K
描述
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

TE28F400CVT80 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:20 X 12 MM, TSOP-48
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.79Is Samacsys:N
最长访问时间:110 ns其他特性:ALSO OPERATES WITH 4.5V-5.5V SUPPLY, TOP BOOT BLOCK
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:NO
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDSO-G48
JESD-609代码:e0内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,3
端子数量:48字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3/5 V编程电压:5 V
认证状态:Not Qualified部门规模:16K,8K,96K,128K
最大待机电流:0.000008 A子类别:Flash Memories
最大压摆率:0.07 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NOR TYPE
Base Number Matches:1

TE28F400CVT80 数据手册

 浏览型号TE28F400CVT80的Datasheet PDF文件第2页浏览型号TE28F400CVT80的Datasheet PDF文件第3页浏览型号TE28F400CVT80的Datasheet PDF文件第4页浏览型号TE28F400CVT80的Datasheet PDF文件第5页浏览型号TE28F400CVT80的Datasheet PDF文件第6页浏览型号TE28F400CVT80的Datasheet PDF文件第7页 
PRELIMINARY  
E
4-MBIT (256K X 16, 512K X 8)  
SmartVoltage BOOT BLOCK FLASH  
MEMORY FAMILY  
28F400BV-T/B, 28F400CV-T/B, 28F004BV-T/B  
28F400CE-T/B, 28F004BE-T/B  
Intel SmartVoltage Technology  
5V or 12V Program/Erase  
Extended Temperature Operation  
–40°C to +85°C  
2.7V, 3.3V or 5V Read Operation  
Increased Programming Throughput  
at 12V VPP  
Extended Cycling Capability  
100,000 Block Erase Cycles  
(Commercial Temperature)  
10,000 Block Erase Cycles  
(Extended Temperature)  
Very High-Performance Read  
5V: 60/80/120 ns Max. Access Time,  
30/40 ns Max. Output Enable Time  
3V: 110/150/180 ns Max Access  
65/90 ns Max. Output Enable Time  
2.7V: 120 ns Max Access 65 ns Max.  
Output Enable Time  
Automated Word/Byte Program and  
Block Erase  
Industry-Standard Command User  
Interface  
Status Registers  
Low Power Consumption  
Max 60 mA Read Current at 5V  
Max 30 mA Read Current at  
2.7V–3.6V  
Erase Suspend Capability  
SRAM-Compatible Write Interface  
Automatic Power Savings Feature  
1 mA Typical ICC Active Current in  
Static Operation  
x8/x16-Selectable Input/Output Bus  
28F400 for High Performance 16- or  
32-bit CPUs  
Reset/Deep Power-Down Input  
0.2 µA ICCTypical  
x8-Only Input/Output Architecture  
28F004B for Space-Constrained  
8-bit Applications  
Provides Reset for Boot Operations  
Hardware Data Protection Feature  
Write Lockout during Power  
Transitions  
Optimized Array Blocking Architecture  
One 16-KB Protected Boot Block  
Two 8-KB Parameter Blocks  
One 96-KB Main Block  
Industry-Standard Surface Mount  
Packaging  
40-Lead TSOP  
44-Lead PSOP: JEDEC ROM  
Compatible  
48-Lead TSOP  
56-Lead TSOP  
Three 128-KB Main Blocks  
Top or Bottom Boot Locations  
Absolute Hardware-Protection for Boot  
Block  
Software EEPROM Emulation with  
Parameter Blocks  
Footprint Upgradeable from 2-Mbit and  
to 8-Mbit Boot Block Flash Memories  
ETOX™ IV Flash Technology  
July 1997  
Order Number: 290530-005  

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