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TE28F256P33B95B PDF预览

TE28F256P33B95B

更新时间: 2024-11-14 15:54:11
品牌 Logo 应用领域
恒忆 - NUMONYX 光电二极管内存集成电路
页数 文件大小 规格书
96页 1378K
描述
Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56

TE28F256P33B95B 技术参数

生命周期:Transferred零件包装代码:TSOP
包装说明:14 X 20 MM, TSOP-56针数:56
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.51
最长访问时间:95 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块:BOTTOMJESD-30 代码:R-PDSO-G56
长度:18.4 mm内存密度:268435456 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:56
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):225
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:14 mmBase Number Matches:1

TE28F256P33B95B 数据手册

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®
Numonyx™ StrataFlash Embedded Memory  
(P33)  
Datasheet  
Product Features  
„ High performance:  
„ Security:  
— 85 ns initial access  
— 52MHz with zero wait states, 17ns clock-to-  
data output synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst  
mode  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— 3.0 V buffered programming at 7 µs/byte  
(Typ)  
— One-Time Programmable Registers:  
— 64 unique factory device identifier bits  
— 2112 user-programmable OTP bits  
— Selectable OTP space in Main Array:  
— Four pre-defined 128-KByte blocks (top or  
bottom configuration).  
— Up to Full Array OTP Lockout  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down capability  
„ Software:  
„ Architecture:  
— Multi-Level Cell Technology: Highest  
Density at Lowest Cost  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
— 128-KByte main blocks  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Numonyx™ Flash Data Integrator optimized  
— Basic Command Set and Extended  
Command Set compatible  
— Common Flash Interface capable  
„ Voltage and Power:  
„ Density and Packaging  
— VCC (core) voltage: 2.3 V – 3.6 V  
— VCCQ (I/O) voltage: 2.3 V – 3.6 V  
— Standby current: 35µA (Typ) for 64-Mbit  
— 4-Word synchronous read current:  
16 mA (Typ) at 52MHz  
— 56-Lead TSOP package (64, 128, 256, 512-  
Mbit)  
— 64-Ball Numonyx™ Easy BGA package (64,  
128, 256, 512-Mbit)  
— Numonyx™ QUAD+ SCSP (64, 128, 256,  
512-Mbit)  
— 16-bit wide data bus  
„ Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology  
314749-05  
November 2007  

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