Datasheet > TE28F256P30TFA

TE28F256P30TFA

更新时间： 2024-11-15 07:55:07

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
91页	983K
描述
Flash, 16MX16, PDSO56, TSOP-56

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中文翻译

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数据手册

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TE28F256P30TFA 数据手册

Numonyx^TMStrataFlash^®Embedded Memory

(P30-65nm)

256-Mbit, 512-Mbit (256M/256M)

Datasheet

Product Features

High performance

Security

— 100 ns initial access for Easy BGA

— 110 ns initial access for TSOP

— 25 ns 16-word asynchronous-page read mode

— 52 MHz with zero WAIT states, 17ns clock-to-

data output synchronous-burst read mode

— 4-, 8-, 16-, and continuous-word options for

burst mode

— One-Time Programmable Register:

• 64 unique factory device identifier bits

• 2112 user-programmable OTP bits

— Absolute write protection: V = V

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— Buffered Enhanced Factory Programming

(BEFP) at 2.0 MByte/s (Typ) using 512-word

buffer

— Password Access feature

Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Numonyx™ Flash Data Integrator optimized

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

— Common Flash Interface capable

— 1.8 V buffered programming at 1.5MByte/s

(Typ) using 512-word buffer

Architecture

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

Density and Packaging

— 56-Lead TSOP package (256-Mbit only)

— 64-Ball Easy BGA package (256, 512-Mbit)

— Numonyx™ QUAD+ SCSP (256, 512-Mbit)

— 16-bit wide data bus

— 128-KByte main blocks

— Blank Check to verify an erased block

Voltage and Power

Quality and Reliability

— V (core) voltage: 1.7 V – 2.0 V

CCQ

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X process technology

— V

(I/O) voltage: 1.7 V – 3.6 V

— Standby current: 65 µA (Typ) for 256-Mbit;

— 52 MHz continuos synchronous read current:

21mA (Typ)/24mA(Max)

Datasheet

Apr 2009

Order Number: 320002-08

12 3 4 5 6 7...91

中文翻译

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与TE28F256P30TFA相关器件

型号	品牌	获取价格	描述	数据表
TE28F256P33B95A	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P33B95A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P33B95B	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P33B95B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P33BFA	MICRON	获取价格	2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
TE28F256P33T95	INTEL	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P33T95A	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P33T95A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P33T95B	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P33T95B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory

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