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TE28F256P30T95 PDF预览

TE28F256P30T95

更新时间: 2024-11-14 04:49:31
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
99页 1401K
描述
Numonyx StrataFlash Embedded Memory

TE28F256P30T95 技术参数

是否Rohs认证:不符合生命周期:Transferred
零件包装代码:TSOP包装说明:14 X 20 MM, TSOP-56
针数:56Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.59Is Samacsys:N
最长访问时间:95 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PDSO-G56长度:18.4 mm
内存密度:268435456 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:1
功能数量:1部门数/规模:4,255
端子数量:56字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP56,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:4 words并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:1.8,1.8/3.3 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K,64K
最大待机电流:0.000115 A子类别:Flash Memories
最大压摆率:0.028 mA最大供电电压 (Vsup):2 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:14 mm
Base Number Matches:1

TE28F256P30T95 数据手册

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®
Numonyx™ StrataFlash Embedded Memory  
(P30)  
Datasheet  
Product Features  
„ High performance  
„ Security  
— One-Time Programmable Registers:  
— 85 ns initial access  
• 64 unique factory device identifier bits  
• 2112 user-programmable OTP bits  
— Selectable OTP Space in Main Array:  
• Four pre-defined 128-KByte blocks (top or bottom  
configuration)  
— 52 MHz with zero wait states, 17ns clock-to-data output  
synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Buffered Enhanced Factory Programming (BEFP) at 5 μs/  
byte (Typ)  
• Up to Full Array OTP Lockout  
— Absolute write protection: V = V  
PP  
SS  
— 1.8 V buffered programming at 7 μs/byte (Typ)  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
„ Architecture  
— Multi-Level Cell Technology: Highest Density at Lowest  
Cost  
„ Software  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or bottom  
configuration  
— 20 μs (Typ) program suspend  
— 20 μs (Typ) erase suspend  
— Numonyx™ Flash Data Integrator optimized  
— Basic Command Set and Extended Command Set  
compatible  
— 128-KByte main blocks  
„ Voltage and Power  
— V (core) voltage: 1.7 V – 2.0 V  
CC  
— Common Flash Interface capable  
— V  
(I/O) voltage: 1.7 V – 3.6 V  
CCQ  
„ Density and Packaging  
— Standby current: 20μA (Typ) for 64-Mbit  
— 4-Word synchronous read current:  
13 mA (Typ) at 40 MHz  
— 56- Lead TSOP package (64, 128, 256,  
512- Mbit)  
— 64- Ball Numonyx™ Easy BGA package (64,  
128, 256, 512- Mbit)  
— Numonyx™ QUAD+ SCSP (64, 128, 256,  
512- Mbit)  
„ Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology  
— 16-bit wide data bus  
Order Number: 306666-11  
November 2007  

与TE28F256P30T95相关器件

型号 品牌 获取价格 描述 数据表
TE28F256P30T95A NUMONYX

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Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P30T95A MICRON

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64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P30TFA NUMONYX

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Flash, 16MX16, PDSO56, TSOP-56
TE28F256P30TFA MICRON

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1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
TE28F256P33B95A NUMONYX

获取价格

Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P33B95A MICRON

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64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P33B95B NUMONYX

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Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P33B95B MICRON

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64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P33BFA MICRON

获取价格

2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
TE28F256P33T95 INTEL

获取价格

Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56