Datasheet > TE28F256M29EWLA

TE28F256M29EWLA

更新时间： 2024-11-15 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
75页	855K
描述
(x8/x16), 3V, Uniform Block, Parallel NOR Flash

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数据手册

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TE28F256M29EWLA 数据手册

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx

JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx

JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx

PC28F00BM29EWxx, RC28F00BM29EWxx

• V_PP/WP# pin protection

– Protects first or last block regardless of block

protection settings

• Software protection

Features

• 2Gb = stacked device (two 1Gb die)

• Supply voltage

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

• Asynchronous random/page read

– Page size: 16 words or 32 bytes

– Page access: 25ns

– Random access: 100ns (Fortified BGA);

110ns (TSOP)

• Buffer program: 512-word program buffer

• Program time

– Volatile protection

– Nonvolatile protection

– Password protection

– Password access

• Extended memory block

– 128-word (256-byte) block for permanent, secure

identification

– Programmed or locked at the factory or by the

customer

– 0.88µs per byte (1.14 MB/s) TYP when using full

512-word buffer size in buffer program

• Memory organization

– Uniform blocks: 128-Kbytes or 64-Kwords each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUS-

PEND operation

– Read or program another block during an ERASE

SUSPEND operation

• Low power consumption: Standby mode

• JESD47H-compliant

– 100,000 minimum ERASE cycles per block

– Data retention: 20 years (TYP)

• 65nm multilevel cell (MLC) process technology

• Fortified BGA and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

• Operating temperature

– Ambient: –40°C to +85°C

• BLANK CHECK operation to verify an erased block

• Unlock bypass, block erase, chip erase, and write to

buffer capability

– Fast buffered/batch programming

– Fast block/chip erase

PDF: 09005aef849b4b09

m29ew_256mb_2gb.pdf - Rev. B 8/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...75

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与TE28F256M29EWLA相关器件

型号	品牌	获取价格	描述	数据表
TE28F256P30	INTEL	获取价格	Intel StrataFlash Memory (J3)
TE28F256P30B85	INTEL	获取价格	Intel StrataFlash Embedded Memory
TE28F256P30B95	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
TE28F256P30B95A	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P30B95A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P30B95B	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256P30B95B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
TE28F256P30BFA	MICRON	获取价格	1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
TE28F256P30T85	INTEL	获取价格	Intel StrataFlash Embedded Memory
TE28F256P30T95	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory

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