5秒后页面跳转
TE28F256J3C125SL7HD PDF预览

TE28F256J3C125SL7HD

更新时间: 2024-11-14 19:29:15
品牌 Logo 应用领域
英特尔 - INTEL 光电二极管内存集成电路闪存
页数 文件大小 规格书
72页 563K
描述
Flash, 16MX16, PDSO56

TE28F256J3C125SL7HD 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP56,.8,20Reach Compliance Code:unknown
风险等级:5.91备用内存宽度:8
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PDSO-G56
内存密度:268435456 bit内存集成电路类型:FLASH
内存宽度:16部门数/规模:256
端子数量:56字数:16777216 words
字数代码:16000000最高工作温度:85 °C
最低工作温度:-40 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP56,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH页面大小:4/8 words
并行/串行:PARALLEL电源:3/3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:128K最大待机电流:0.00012 A
子类别:Flash Memories最大压摆率:0.08 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:NO类型:NOR TYPE
Base Number Matches:1

TE28F256J3C125SL7HD 数据手册

 浏览型号TE28F256J3C125SL7HD的Datasheet PDF文件第2页浏览型号TE28F256J3C125SL7HD的Datasheet PDF文件第3页浏览型号TE28F256J3C125SL7HD的Datasheet PDF文件第4页浏览型号TE28F256J3C125SL7HD的Datasheet PDF文件第5页浏览型号TE28F256J3C125SL7HD的Datasheet PDF文件第6页浏览型号TE28F256J3C125SL7HD的Datasheet PDF文件第7页 
Intel StrataFlash® Memory (J3)  
256-Mbit (x8/x16)  
Datasheet  
Product Features  
Performance  
Architecture  
110/115/120/150 ns Initial Access Speed  
Multi-Level Cell Technology: High  
Density at Low Cost  
125 ns Initial Access Speed (256 Mbit  
density only)  
High-Density Symmetrical 128-Kbyte  
Blocks  
25 ns Asynchronous Page mode Reads  
—256 Mbit (256 Blocks) (0.18µm only)  
—128 Mbit (128 Blocks)  
64 Mbit (64 Blocks)  
30 ns Asynchronous Page mode Reads  
(256Mbit density only)  
32-Byte Write Buffer  
—32 Mbit (32 Blocks)  
—6.8 µs per byte effective  
Quality and Reliability  
Operating Temperature:  
-40 °C to +85 °C  
programming time  
Software  
Program and Erase suspend support  
100K Minimum Erase Cycles per Block  
0.18 µm ETOX™ VII Process (J3C)  
Flash Data Integrator (FDI), Common  
Flash Interface (CFI) Compatible  
Security  
0.25 µm ETOX™ VI Process (J3A)  
Packaging and Voltage  
128-bit Protection Register  
—64-bit Unique Device Identifier  
—64-bit User Programmable OTP Cells  
56-Lead TSOP Package  
®
64-Ball Intel Easy BGA Package  
Lead-free packages available  
®
48-Ball Intel VF BGA Package (32 and  
Absolute Protection with VPEN = GND  
Individual Block Locking  
Block Erase/Program Lockout during  
Power Transitions  
64 Mbit) (x16 only)  
VCC 2.7 V to 3.6 V  
=
VCCQ = 2.7 V to 3.6 V  
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the Intel StrataFlash® Memory (J3)  
device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in 256-  
Mbit (32-Mbyte), 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-  
per-cell storage technology to the flash market segment. Benefits include more density in less space, high-speed  
interface, lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future  
devices.  
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes  
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components  
are ideal for code and data applications where high density and low cost are required. Examples include  
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.  
By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from  
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash®  
memory (28F640J5 and 28F320J5) devices.  
J3 memory components deliver a new generation of forward-compatible software support. By using the  
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density  
upgrades and optimized write capabilities of future Intel StrataFlash® memory devices. Manufactured on Intel®  
0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device  
provides the highest levels of quality and reliability.  
Notice: This document contains information on new products in production. The specifications are  
subject to change without notice. Verify with your local Intel sales office that you have the latest  
datasheet before finalizing a design.  
Order Number: 290667-021  
March 2005  

与TE28F256J3C125SL7HD相关器件

型号 品牌 获取价格 描述 数据表
TE28F256J3C-150 INTEL

获取价格

Intel StrataFlash Memory (J3)
TE28F256J3D95A NUMONYX

获取价格

Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256J3D95A MICRON

获取价格

32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory
TE28F256J3D95B MICRON

获取价格

32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory
TE28F256J3F105A NUMONYX

获取价格

Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, TSOP-56
TE28F256J3F105A MICRON

获取价格

256Mb, 65nm Embedded Parallel NOR Flash
TE28F256M29EWLA MICRON

获取价格

(x8/x16), 3V, Uniform Block, Parallel NOR Flash
TE28F256P30 INTEL

获取价格

Intel StrataFlash Memory (J3)
TE28F256P30B85 INTEL

获取价格

Intel StrataFlash Embedded Memory
TE28F256P30B95 NUMONYX

获取价格

Numonyx StrataFlash Embedded Memory