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TE28F016B3B120 PDF预览

TE28F016B3B120

更新时间： 2024-01-07 17:43:49
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
49页 403K
描述
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

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中文翻译

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TE28F016B3B120 技术参数

生命周期：Obsolete零件包装代码：TSOP
包装说明：TSOP1, TSSOP40,.8,20针数：40
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.27
Is Samacsys：N最长访问时间：120 ns
其他特性：BOTTOM BOOT BLOCK启动块：BOTTOM
命令用户界面：YES数据轮询：NO
JESD-30 代码：R-PDSO-G40长度：18.4 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：8,31端子数量：40
字数：2097152 words字数代码：2000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP40,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
电源：1.8/3.6,3/3.3 V编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：8K,64K最大待机电流：0.00001 A
子类别：Flash Memories最大压摆率：0.023 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
切换位：NO类型：NOR TYPE
宽度：10 mmBase Number Matches：1

TE28F016B3B120 数据手册

 浏览型号TE28F016B3B120的Datasheet PDF文件第2页浏览型号TE28F016B3B120的Datasheet PDF文件第3页浏览型号TE28F016B3B120的Datasheet PDF文件第4页浏览型号TE28F016B3B120的Datasheet PDF文件第5页浏览型号TE28F016B3B120的Datasheet PDF文件第6页浏览型号TE28F016B3B120的Datasheet PDF文件第7页 
PRELIMINARY  
E
SMART 3 ADVANCED BOOT BLOCK  
BYTE-WIDE  
8-MBIT (1024K x 8), 16-MBIT (2056K x 8)  
FLASH MEMORY FAMILY  
28F008B3, 28F016B3  
Flexible SmartVoltage Technology  
2.7V–3.6V Program/Erase  
Extended Cycling Capability  
10,000 Block Erase Cycles  
2.7V–3.6V Read Operation  
12V VPP Fast Production  
Programming  
Automated Byte Program and Block  
Erase  
Command User Interface  
Status Registers  
2.7V or 1.8V I/O Option  
Reduces Overall System Power  
SRAM-Compatible Write Interface  
Automatic Power Savings Feature  
Optimized Block Sizes  
Eight 8-Kbyte Blocks for Data,  
Top or Bottom Locations  
Up to Thirty-One 64-Kbyte Blocks  
for Code  
Reset/Deep Power-Down  
1 µA ICCTypical  
Spurious Write Lockout  
Standard Surface Mount Packaging  
48-Ball µBGA* Package  
High Performance  
2.7V–3.6V: 120 ns Max Access Time  
40-Lead TSOP Package  
Block Locking  
Footprint Upgradeable  
Upgradeable from 2-, 4- and 8-Mbit  
Boot Block  
VCC-Level Control through WP#  
Low Power Consumption  
20 mA Maximum Read Current  
ETOX™ V (0.4 µ) Flash Technology  
Absolute Hardware-Protection  
VPP = GND Option  
x8-Only Input/Output Architecture  
For Space-Constrained 8-bit  
Applications  
VCC Lockout Voltage  
Extended Temperature Operation  
–40°C to +85°C  
Supports Code plus Data Storage  
Optimized for FDI, Flash Data  
Integrator Software  
Fast Program Suspend Capability  
Fast Erase Suspend Capability  
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4µ technology, represents a feature-  
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability  
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been  
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and  
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.  
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,  
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Byte-Wide  
products will be available in 40-lead TSOP and 48-ball µBGA* packages. Additional information on this  
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp  
May 1997  
Order Number: 290605-001  
1234567...49

中文翻译

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