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TE28F001BX-B90

更新时间： 2024-01-16 04:20:32

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
33页	437K
描述
1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

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技术参数
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TE28F001BX-B90 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TSOP	包装说明：	8 X 20 MM, 1.20 MM HEIGHT, TSOP-32
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.92	最长访问时间：	90 ns
其他特性：	DEEP POWER-DOWN; BOTTOM BOOT BLOCK	启动块：	BOTTOM
命令用户界面：	YES	数据轮询：	NO
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G32
JESD-609代码：	e0	长度：	18.4 mm
内存密度：	1048576 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
部门数/规模：	1,2,1	端子数量：	32
字数：	131072 words	字数代码：	128000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128KX8
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装等效代码：	TSSOP32,.8,20
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL	电源：	5 V
编程电压：	12 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	部门规模：	8K,4K,112K
最大待机电流：	0.000002 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	切换位：	NO
类型：	NOR TYPE	宽度：	8 mm
Base Number Matches：	1

TE28F001BX-B90 数据手册

1-MBIT (128K x 8)

BOOT BLOCK FLASH MEMORY

28F001BX-T/28F001BX-B/28F001BN-T/28F001BN-B

High-Integration Blocked Architecture

High-Performance Read

Ð 70/75 ns, 90 ns, 120 ns, 150 ns

Maximum Access Time

Ð One 8 KB Boot Block w/Lock Out

Ð Two 4 KB Parameter Blocks

Ð One 112 KB Main Block

Ð 5.0V 10% V

100,000 Erase/Program Cycles Per

Block

Hardware Data Protection Feature

Ð Erase/Write Lockout during Power

Transitions

Simplified Program and Erase

Ð Automated Algorithms via On-Chip

Write State Machine (WSM)

Advanced Packaging, JEDEC Pinouts

Ð 32-Pin PDIP

Ð 32-Lead PLCC, TSOP

SRAM-Compatible Write Interface

Deep Power-Down Mode

ETOX^TMII Nonvolatile Flash

Technology

Ð EPROM-Compatible Process Base

Ð High-Volume Manufacturing

Experience

Ð 0.05 mA I

Typical

Ð 0.8 mA I Typical

12.0V 5% V

Extended Temperature Options

Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with

features that simplify write and allow block erase. These devices aid the system designer by combining the

functions of several components into one, making boot block flash an innovative alternative to EPROM and

EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the

28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor

interface.

The 28F001BX-B and 28F001BX-T are 1,048,576 bit nonvolatile memories organized as 131,072 bytes of

8 bits. They are offered in 32-pin plastic DIP, 32-lead PLCC and 32-lead TSOP packages. Pin assignment

conform to JEDEC standards for byte-wide EPROMs. These devices use an integrated command port and

state machine for simplified block erasure and byte reprogramming. The 28F001BX-T’s block locations pro-

vide compatibility with microprocessors and microcontrollers that boot from high memory, such as Intel’s

MCS -186 family, 80286, i386^TM, i486^TM, i860^TMand 80960CA. With exactly the same memory segmentation,

the 28F001BX-B memory map is tailored for microprocessors and microcontrollers that boot from low memory,

such as Intel’s MCS-51, MCS-196, 80960KX and 80960SX families. All other features are identical, and unless

otherwise noted, the term 28F001BX can refer to either device throughout the remainder of this document.

The boot block section includes a reprogramming write lock out feature to guarantee data integrity. It is

designed to contain secure code which will bring up the system minimally and download code to the other

locations of the 28F001BX. Intel’s 28F001BX employs advanced CMOS circuitry for systems requiring high-

performance access speeds, low power consumption, and immunity to noise. Its access time provides

no-WAIT-state performance for a wide range of microprocessors and microcontrollers. A deep-powerdown

mode lowers power consumption to 0.25 mW typical through V , crucial in laptop computer, handheld instru-

mentation and other low-power applications. The RP power control input also provides absolute data protec-

tion during system powerup or power loss.

Manufactured on Intel’s ETOX process base, the 28F001BX builds on years of EPROM experience to yield the

highest levels of quality, reliability, and cost-effectiveness.

NOTE: The 28F001BN is equivalent to the 28F001BX.

*Other brands and names are the property of their respective owners.

Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or

copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make

changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.

November 1995

Order Number: 290406-007

12 3 4 5 6 7...33

中文翻译

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TE28F001BX-B90 替代型号

型号	品牌	替代类型	描述	数据表
CAT28F001H-90BT	ONSEMI	功能相似	1 Megabit CMOS Boot Block Flash Memory
CAT28F001HI-90BT	ONSEMI	功能相似	1 Megabit CMOS Boot Block Flash Memory
E28F001BX-B90	INTEL	功能相似	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

与TE28F001BX-B90相关器件

型号	品牌	获取价格	描述	数据表
TE28F001BX-T150	INTEL	获取价格	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
TE28F001BX-T90	INTEL	获取价格	1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
TE28F002BVB80	INTEL	获取价格	2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F002BV-B80	INTEL	获取价格	Flash, 256KX8, 110ns, PDSO40, 10 X 20 MM, TSOP-40
TE28F002BVT80	INTEL	获取价格	2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F002BX-B80	INTEL	获取价格	2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F002BX-B90	ETC	获取价格	x8 Flash EEPROM
TE28F002BX-T80	INTEL	获取价格	2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
TE28F002BX-T90	ETC	获取价格	x8 Flash EEPROM
TE28F004	INTEL	获取价格	3 Volt Advanced Boot Block Flash Memory

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