Datasheet > TDTA123J

TDTA123J

更新时间： 2023-12-20 18:44:28

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	224K
描述
PNP Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-23(SOT23)

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TDTA123J 数据手册

TDTA123J

Bipolar Transistors Silicon PNP Epitaxial Type

TDTA123J

1. Applications

•

Switching

Inverter Circuits

Driver Circuits

2. Features

(1) The integrated bias resistor reduces the number of external parts required, making it possible to reduce

system size and assembly time.

(2) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.

(3) Complementary to TDTC123J

3. Packaging and Internal Circuit

1: IN (Base)

2: GND (Emitter)

3: OUT (Collector)

SOT23

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Rating

Unit

Supply voltage

VCC

-50

-100

�

Output current

Power dissipation

Junction temperature

Storage temperature

320

150

Tstg

-55 to 150

�

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2016-03

Toshiba Electronic Devices & Storage Corporation

2020-11-13

Rev.3.0

12 3 4 5

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