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SS24 PDF预览

SS24

更新时间: 2024-01-03 17:47:15
品牌 Logo 应用领域
台冠 - TDD 二极管光电二极管
页数 文件大小 规格书
2页 238K
描述
SS24 SMA 2A 40V

SS24 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:6.76
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SS24 数据手册

 浏览型号SS24的Datasheet PDF文件第2页 
D A Y A  
- TDD-  
SS22 - SS21  
0
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers  
SMA/DO-214AC  
Features  
For surface mounted application  
Easy pick and place  
Metal to silicon rectifier, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low VF  
High surge current capability  
Plastic material used carriers Underwriters  
Laboratory Classification 94V-0  
Epitaxial construction  
High temperature soldering:  
o
260 C / 10 seconds at terminals  
Mechanical Data  
Case: Molded plastic  
Dimensions in inches and (millimeters)  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Packaging: 12mm tape per EIA STD RS-481  
Weight: 0.093gram  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol SS SS SS SS SS SS  
SS  
Type Number  
Units  
210  
22  
20  
14  
20  
23  
30  
21  
30  
24  
40  
28  
40  
25  
50  
35  
50  
26  
29  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
60 90  
42 63  
60 90  
100  
70  
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
100  
V
Maximum Average Forward Rectified Current  
at TL(See Fig. 1)  
2.0  
50  
A
A
I(AV)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
Maximum Instantaneous Forward Voltage  
o
0.5  
0.4  
0.70  
0.65  
0.85  
0.70  
0.1  
(Note 1)  
IF= 2.0A @ 25 C  
o
V
VF  
@ 100 C  
o
0.4  
Maximum DC Reverse Current @ T =25 C at  
A
mA  
mA  
IR  
o
Rated DC Blocking Voltage @ T =125 C  
A
10  
5.0  
Typical Junction Capacitance (Note 3)  
Typical Thermal Resistance ( Note 2 )  
Cj  
130  
pF  
R
17  
75  
o
θJL  
C/W  
R
θJA  
o
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +125  
-65 to +150  
-65 to +150  
C
o
TSTG  
C
Notes:  
1. Pulse Test with PW=300 usec, 1% Duty Cycle  
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.  
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
Factory Address: Taiguan Industrial zone, Yanjinyu Dongjin Rode No.1, XinXiang, HeNan, China  

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