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TD62S050AFM

更新时间: 2024-11-25 04:28:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 87K
描述
TD62S050AFM

TD62S050AFM 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SON包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
最大集电极电流 (IC):0.22 A集电极-发射极最大电压:50 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):1000
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:1端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TD62S050AFM 数据手册

 浏览型号TD62S050AFM的Datasheet PDF文件第2页浏览型号TD62S050AFM的Datasheet PDF文件第3页浏览型号TD62S050AFM的Datasheet PDF文件第4页浏览型号TD62S050AFM的Datasheet PDF文件第5页 
                                                        
                                                        
                                                                                        
                                                                                        
                                                                                          
                                                                                           
                                                                     
                                                                     
TD62S050AFM  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Output withstand voltage  
Output current  
V
50  
50  
V
V
CEO  
V
CE (SUS)  
I
500  
mA  
V
OUT  
Input voltage  
V
-0.5~30  
50  
IN  
Clamp diode reverse voltage  
Clamp diode forward current  
Power dissipation  
V
V
R
I
500  
mA  
W
F
P
(Note 4)  
0.78  
D
R
th (j-a)  
(Note 4)  
160  
25  
Saturated thermal resistance  
°C/W  
R
th (j-c)  
(Note 5)  
Operating temperature  
Storage temperature  
T
-40~85  
°C  
°C  
opr  
T
-55~150  
stg  
2
Note 4: 114.3 ´ 76.2 ´ 1.6 mm glass epoxy film substrate Cu heat dissipation pattern 100 mm  
Note 5: When an infinite heat sink is mounted.  
Recommended Operating Condition (Ta = -40~85°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Output withstand voltage  
Output current  
V
¾
0
¾
0
¾
¾
¾
¾
¾
¾
¾
50  
220  
24  
V
mA  
V
CEO  
I
Ta = 60°C, T = 105°C  
j
OUT  
Input voltage  
V
¾
IN  
IN (ON)  
Output ON  
Output OFF  
V
I
= 400 mA, h = 800  
2.8  
0
24  
OUT  
FE  
Input voltage  
V
V
¾
¾
¾
0.7  
50  
IN (OFF)  
Clamp diode reverse voltage  
Clamp diode forward current  
V
¾
¾
V
R
I
350  
mA  
F
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristics  
Symbol  
Test Condition  
= 50 V, V = OPEN  
Min  
Typ.  
Max  
Unit  
Output leakage current  
I
1
V
¾
¾
¾
1.1  
1.0  
¾
10  
1.3  
1.2  
¾
mA  
CEX  
CE  
OUT  
OUT  
IN  
I
I
= 300 mA, I = 500 mA  
IN  
Output saturation voltage  
V
2
V
CE (sat)  
= 200 mA, I = 350 mA  
¾
IN  
DC current amplification ratio  
h
FE  
2
3
V
V
= 2.0 V, I  
= 350 mA  
= 350 mA  
1000  
¾
CE  
OUT  
OUT  
Input current  
Output ON  
I
= 2.4 V, I  
0.4  
¾
0.7  
2.6  
2.2  
10  
mA  
V
IN (ON)  
IN  
Output ON  
Output ON  
I
I
= 350 mA  
¾
OUT  
OUT  
V
= 2 V,  
= 800  
CE  
FE  
Input voltage  
V
4
IN (ON)  
h
= 200 mA  
¾
¾
Clamp diode leakage current  
Clamp diode forward voltage  
Turn-on delay  
I
5
6
V
= 50 V  
R
¾
¾
mA  
R
V
I
= 350 mA  
F
¾
1.6  
0.02  
1.0  
2.0  
¾
V
F
t
¾
ON  
V
C
= 50 V, R = 125 W,  
L
OUT  
7
ms  
= 15 pF  
L
Turn-off delay  
t
¾
¾
OFF  
2
2001-12-05  

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