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TD4M40M PDF预览

TD4M40M

更新时间: 2024-11-21 14:56:03
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
3页 261K
描述
桥式整流管

TD4M40M 数据手册

 浏览型号TD4M40M的Datasheet PDF文件第2页浏览型号TD4M40M的Datasheet PDF文件第3页 
TD4M40M  
Surface Mount Glass Passivated Bridge Rectifier  
Reverse Voltage : 1000 V  
Forward Current : 4 A  
Features  
• Glass Passivated Chip Junction  
• High Surge Current Capability  
Mechanical Data  
• Case: Molded plastic, UMSB  
Terminals: solderable per MIL-STD-750, Method 2026  
Absolute Maximum Ratings and Characteristics  
Ratings at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or  
inductive load. For capacitive load, derate current by 20%.  
Symbols  
Marking  
VRRM  
TD4M40M  
MB40M  
1000  
Units  
Parameter  
-
Maximum Recurrent Peak Reverse Voltag  
Maximum RMS Voltage  
V
VRMS  
VDC  
700  
1000  
4
V
V
A
Maximum DC Blocking Voltage  
Average Rectified Output Current  
IF(AV)  
Peak Forward Surge Current 8.3 ms Single Half-sine-  
wave Superimposed on Rated Load (JEDEC Method)  
IFSM  
150  
A
I2t Rating for fusing (t = 8.3 mS)  
I2t  
93.4  
1
A2S  
V
Maximum Forward Voltage at 2 A  
VF  
Maximum DC Reverse Current at Rated DC  
Blocking Voltage DC Blocking Voltage  
Ta = 25℃  
Ta = 125℃  
5
100  
IR  
µA  
Maximum Reverse Recovery Time 1)  
Typical Junction Capacitance 2)  
trr  
10  
50  
10  
60  
µs  
pF  
Cj  
Typical Thermal Resistance form Junction to Case 3)  
Typical Thermal Resistance form Junction to Ambient 3)  
Operating Junction and Storage Temperature Range  
1) Measured with IF = 0.5 A, IR =1 A, Irr = 0.25 A .  
RθJC  
RθJA  
℃/W  
℃/W  
Tj, Tstg  
- 55 to + 150  
2) Measured at 1MHz and applied reverse voltage of 4 V D.C .  
3)  
Mounted on glass epoxy PC board with 4 × 1.5" × 1.5"(3.81 × 3.81 cm)copper pad .  
1 / 3  
®
Dated: 18/06/2020 JD Rev: 02  

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