Datasheet > TD3F30MB

TD3F30MB

更新时间： 2024-11-27 14:55:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	231K
描述
桥式整流管

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中文翻译

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数据手册

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TD3F30MB 数据手册

TD3F30MB

Surface Mount Fast Recovery Bridge Rectifier

Reverse Voltage - 1000 V

Forward Current - 3 A

Features

• Glass passivated chip junction

• Fast reverse recovery time

• Designed for Surface Mount Application

Mechanical Data

• Case: Molded plastic, UMSB

•Terminals: solderable per MIL-STD-750,Method 2026

Absolute Maximum Ratings and Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or

inductive load. For capacitive load, derate current by 20%.

Symbols

Marking

V_RRM

Value

FMB30M

1000

700

Units

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RMS

Maximum DC Blocking Voltage

Average Rectified Output Current

V_DC

1000

I_F(AV)

Peak Forward Surge Current 8.3 ms Single Half-sine-wave

Superimposed on Rated Load (JEDEC Method)

I_FSM

100

180

Peak Forward Surge Current 1 ms Single Half-square-wave

Superimposed on Rated Load

I_FSM

I²t Rating for fusing (t = 8.3 mS)

I²t Rating for fusing (t = 1 mS)

Maximum Forward Voltage at 3 A

I²t

V_F

41.5

16.2

A²S

at T_a= 25℃

Maximum DC Reverse Current at Rated DC

Blocking Voltage DC Blocking Voltage

I_R

µA

200

at T_a= 125℃

Typical Junction Capacitance ¹⁾

Typical Thermal Resistance ²⁾

Maximum Reverse Recovery Time ³⁾

C_J

R_θJA

t_rr

℃/W

500

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

℃

¹⁾Measured at 1MHz and applied reverse voltage of 4 V D.C.

²⁾Mounted on glass epoxy PC board with 4 x 1.5cm x1.5cm copper pad.

³⁾Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A .

1 / 3

Dated: 18/06/2020 JD Rev: 05

12 3

中文翻译

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