品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 驱动器双极性晶体管 | |
页数 | 文件大小 | 规格书 |
12页 | 158K | |
描述 | ||
Advanced IGBT/MOSFET Driver |
是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP8,.3 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.82 | 内置保护: | OVER CURRENT; UNDER VOLTAGE |
接口集成电路类型: | HALF BRIDGE BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 输出电流流向: | SOURCE AND SINK |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 16 V | 认证状态: | Not Qualified |
子类别: | MOSFET Drivers | 最大供电电压: | 26 V |
标称供电电压: | 16 V | 表面贴装: | NO |
温度等级: | AUTOMOTIVE | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 0.4 µs | 接通时间: | 2.2 µs |
宽度: | 7.62 mm |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
TD351IN | STMICROELECTRONICS | Advanced IGBT/MOSFET Driver |
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TD352 | STMICROELECTRONICS | Advanced IGBT/MOSFET Driver |
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TD352_11 | STMICROELECTRONICS | Advanced IGBT/MOSFET driver |
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TD352ID | STMICROELECTRONICS | Advanced IGBT/MOSFET Driver |
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TD352IDT | STMICROELECTRONICS | Advanced IGBT/MOSFET Driver |
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TD352IN | STMICROELECTRONICS | Advanced IGBT/MOSFET Driver |
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