Datasheet > TD351_11

TD351_11

更新时间： 2024-11-26 12:23:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		驱动器双极性晶体管
页数	文件大小	规格书
19页	249K
描述
Advanced IGBT/MOSFET driver

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TD351_11 数据手册

TD351

Advanced IGBT/MOSFET driver

Features

■ 1.7 A sink / 1.3 A source (typ) current capability

■ Active Miller clamp feature

■ Two-level turn-off with adjustable level and

delay

■ Input compatible with pulse transformer or

SO-8

optocoupler

■ UVLO protection

The TD351 is compatible with both pulse

transformer and optocoupler signals.

■ 2 kV ESD protection

Applications

■ 1200 V 3-phase inverters

■ Motor control systems

■ UPS

Description

This device is an advanced gate driver for IGBT

and power MOSFETs. Control and protection

functions are included and allow the design of

high reliability systems.

The innovative active Miller clamp function

eliminates the need for negative gate drive in

most applications and allows the use of a simple

bootstrap supply for the high side driver.

The TD351 includes a two-level turn-off feature

with adjustable level and delay. This function

protects against excessive overvoltage at turn-off

in case of overcurrent or short-circuit conditions.

The same delay is applied at turn-on to prevent

pulse width distortion.

Table 1.

Device summary

Order codes

Temperature range

Package

Packaging

TD351ID

Tube

-40°C, +125°C

SO-8

TD351IDT

Tape and reel

June 2011

Doc ID 10977 Rev 2

1/19

www.st.com

12 3 4 5 6 7...19

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