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TD13005D PDF预览

TD13005D

更新时间: 2024-11-16 14:45:07
品牌 Logo 应用领域
TEMIC /
页数 文件大小 规格书
10页 175K
描述
Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin,

TD13005D 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.76Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:400 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):4JEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

TD13005D 数据手册

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TD13004D TD13005D  
Silicon NPN High Voltage Switching Transistor  
Features  
Monolithic integrated C-E-free-wheel diode  
Very low switching losses  
Very low dynamic saturation  
Very low operating temperature  
High reverse voltage  
HIGH SPEED technology  
Planar passivation  
Very short switching times  
Applications  
Electronic lamp ballast circuits  
Switch-mode power supplies  
2
94 8965  
1
3
94 8964  
1
2
3
TD13004D TD13005D  
TD13004D TD13005D –SMD  
1 Base 2 Collector 3 Emitter  
1 Base 2 Collector 3 Emitter  
Absolute Maximum Ratings  
T
case  
= 25°C, unless otherwise specified  
Parameter  
Collector-emitter voltage  
Test Conditions  
Type  
Symbol  
Value  
300  
400  
600  
700  
9
6
Unit  
V
V
V
V
TD13004D  
TD13005D  
TD13004D  
TD13005D  
V
CEO  
V
CEO  
V
V
V
CES  
CES  
EBO  
Emitter-base voltage  
Collector current  
V
A
I
C
Collector peak current  
Base current  
I
8
2
A
A
CM  
I
B
Base peak current  
I
P
4
30  
150  
A
W
C
BM  
Total power dissipation  
Junction temperature  
Storage temperature range  
T
case  
60 C  
tot  
T
j
T
–65 to +150  
C
stg  
TELEFUNKEN Semiconductors  
1 (10)  
Rev. A2, 18-Jul-97  

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