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TCBZX55C3V9TR PDF预览

TCBZX55C3V9TR

更新时间: 2024-11-20 13:00:47
品牌 Logo 应用领域
TAK_CHEONG 稳压器二极管齐纳二极管测试
页数 文件大小 规格书
6页 181K
描述
Zener Diode, 3.9V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

TCBZX55C3V9TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.44
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e3元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.9 V
表面贴装:NO技术:ZENER
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:5 mA
Base Number Matches:1

TCBZX55C3V9TR 数据手册

 浏览型号TCBZX55C3V9TR的Datasheet PDF文件第2页浏览型号TCBZX55C3V9TR的Datasheet PDF文件第3页浏览型号TCBZX55C3V9TR的Datasheet PDF文件第4页浏览型号TCBZX55C3V9TR的Datasheet PDF文件第5页浏览型号TCBZX55C3V9TR的Datasheet PDF文件第6页 
®
TAK CHEONG  
SEMICONDUCTOR  
500 mW DO-35 Hermetically  
Sealed Glass Zener Voltage  
Regulators  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Parameter  
Value  
Units  
DEVICE MARKING DIAGRAM  
Power Dissipation  
500  
-65 to +175  
+175  
mW  
°C  
L
55T  
xxx  
Storage Temperature Range  
Operating Junction Temperature  
°C  
L
: Logo  
Device Code : TCBZX55Txxx  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
T
: VZ tolerance B or C  
Specification Features:  
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
Zener Voltage Range 2.0 to 75 Volts  
DO-35 Package (JEDEC)  
Through-Hole Device Type Mounting  
Hermetically Sealed Glass  
Cathode  
Anode  
Compression Bonded Construction  
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
RoHS Compliant  
ELECTRICAL SYMBOL  
Solder Hot Dip Tin (Sn) Terminal Finish  
Cathode Indicated By Polarity Band  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
VZ @ IZT  
Z
ZT @ IZT  
(Ω)  
Max  
Z
ZK @ IZK  
(Ω)  
Max  
IR @ VR  
(μA)  
IZT  
(mA)  
IZK  
(mA)  
VR  
(Volts)  
Device Type  
(Volts)  
Max  
Min  
1.88  
2.08  
2.28  
2.51  
2.8  
3.1  
3.4  
3.7  
4.0  
4.4  
4.8  
5.2  
5.8  
6.4  
7.0  
7.7  
8.5  
Max  
2.11  
2.33  
2.56  
2.89  
3.2  
3.5  
3.8  
4.1  
4.6  
5.0  
5.4  
6.0  
6.6  
7.2  
7.9  
8.7  
9.6  
TCBZX55C 2V0  
TCBZX55C 2V2  
TCBZX55C 2V4  
TCBZX55C 2V7  
TCBZX55C 3V0  
TCBZX55C 3V3  
TCBZX55C 3V6  
TCBZX55C 3V9  
TCBZX55C 4V3  
TCBZX55C 4V7  
TCBZX55C 5V1  
TCBZX55C 5V6  
TCBZX55C 6V2  
TCBZX55C 6V8  
TCBZX55C 7V5  
TCBZX55C 8V2  
TCBZX55C 9V1  
TCBZX55C 10  
TCBZX55C 11  
TCBZX55C 12  
TCBZX55C 13  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100  
100  
85  
85  
85  
85  
85  
85  
75  
60  
35  
25  
10  
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
550  
450  
200  
150  
50  
100  
100  
50  
10  
4
2
2
2
1
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
7
7
50  
50  
70  
70  
90  
110  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
10  
15  
20  
20  
26  
9.4  
10.6  
11.6  
12.7  
14.1  
10.4  
11.4  
12.4  
Number: DB-034  
June 2008 / F  
Page 1  

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