TCBAW76TA

更新时间： 2024-02-05 09:46:43

品牌	Logo	应用领域
TAK_CHEONG		整流二极管开关
页数	文件大小	规格书
4页	125K
描述
Rectifier Diode,

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中文翻译

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技术参数
数据手册

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TCBAW76TA 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

TCBAW76TA 数据手册

TAK CHEONG ^®

SEMICONDUCTOR

500 mW DO-35 Hermetically

Sealed Glass Fast Switching

Diodes

AXIAL LEAD

DO35

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_D

T_STG

T_J

Power Dissipation

500

-65 to +150

+175

°C

DEVICE MARKING DIAGRAM

Storage Temperature Range

Operating Junction Temperature

Working Inverse Voltage

°C

W_IV

I_O

Average Rectified Current

150

: Logo

I_FM

Non-repetitive Peak Forward Current

450

Peak Forward Surge Current

(Pulse Width = 1.0 µsecond)

I_FSURGE

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

Fast Switching Device (T_RR<4.0 nS)

DO-35 Package (JEDEC)

Through-Hole Device Type Mounting

Hermetically Sealed Glass

Anode

Cathode

Compression Bonded Construction

All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable

RoHS Compliant

ELECTRICAL SYMBOL

Solder Hot Dip Tin (Sn) Terminal Finish

Cathode Indicated By Polarity Band

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Symbol

Parameter Test Condition

Unit

Min

Max

B_V

I_R

Breakdown Voltage

I_R=5µA

Volts

Reverse Leakage Current

V_R=50V

100

1.0

V_R=50V T_A= 150°

I_F=100mA

V_F

Forward Voltage

Volts

T_RR

Reverse Recovery Time

I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

I_F= 10mA, V_R=6V, R_L=100Ω, I_RR=1mA

Capacitance

V_R=0V, f=1M_HZ

Number: DB-037

June 2008 / D

Page 1

12 3 4

中文翻译

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