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TCBAT43 PDF预览

TCBAT43

更新时间: 2024-11-19 17:14:59
品牌 Logo 应用领域
德昌 - TC /
页数 文件大小 规格书
2页 72K
描述
DO-35

TCBAT43 数据手册

 浏览型号TCBAT43的Datasheet PDF文件第2页 
®
TAK CHEONG  
SEMICONDUCTOR  
200 mW DO-35 Hermetically  
Sealed Glass Fast Switching  
Schottky Barrier Diode  
AXIAL LEAD  
DO35  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
DEVICE MARKING DIAGRAM  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
200  
mW  
°C  
°C  
V
L
BAT  
xx  
Storage Temperature Range  
Operating Junction Temperature  
Repetitive Peak Reverse Voltage  
Maximum DC Blocking Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current  
-65 to +125  
+125  
30  
VRRM  
VR  
L
= Logo  
30  
V
Device Code = BAT42 / BAT43  
IF(AV)  
IFSM  
200  
4
mA  
A
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
§ Low Forward Voltage Drop  
Cathode  
Anode  
§ DO-35 Package (JEDEC)  
ELECTRICAL SYMBOL  
§ Through-Hole Device Type Mounting  
§ Hermetically Sealed Glass  
§ Compression Bonded Construction  
§ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable  
§ RoHS Compliant  
§ Solder Hot Dip Tin (Sn) Lead Finish  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
Max  
BV  
IR  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
30  
Volts  
nA  
VR=25V  
500  
0.40  
0.65  
0.33  
0.45  
1.0  
VF  
TCBAT42, TCBAT42  
TCBAT42, TCBAT43  
TCBAT42, TCBAT43  
IF=10mA  
IF=50mA  
IF=2mA  
0.26  
Volts  
IF=15mA  
IF=200mA  
IF=IR=10mA  
RL=100W  
IRR=1mA  
TRR  
Reverse Recovery Time  
Capacitance  
5 (Typical)  
nS  
pF  
C
VR=1V, f=1MHZ  
7 (Typical)  
Number: DB-048  
Jun 2016 / C  
Page 1  

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