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TCBAS16 PDF预览

TCBAS16

更新时间: 2024-11-19 17:15:51
品牌 Logo 应用领域
德昌 - TC /
页数 文件大小 规格书
5页 399K
描述
SOD-523

TCBAS16 数据手册

 浏览型号TCBAS16的Datasheet PDF文件第2页浏览型号TCBAS16的Datasheet PDF文件第3页浏览型号TCBAS16的Datasheet PDF文件第4页浏览型号TCBAS16的Datasheet PDF文件第5页 
TAK CHEON
G
®  
SEMICONDUCTOR  
200mW SOD-523 SURFACE MOUNT  
Very Small Outline Flat Lead Plastic Package  
General Purpose Application  
High Speed Switching Diode  
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
PD  
TSTG  
TJ  
Power Dissipation  
200  
-55 to +150  
+150  
mW  
°C  
°C  
V
Storage Temperature Range  
Operating Junction Temperature  
Reverse Voltage  
VR  
75  
Peak Forward Current  
(Pulse Width=1s)  
IFSM  
IFM  
500  
200  
mA  
mA  
Forward Current  
These ratings are limiting values above which the serviceability of the diode may be impaired.  
Specification Features:  
.
.
.
.
.
.
.
Fast Switching Device (TRR <4.0 nS)  
RoHS Compliant  
Green EMC  
DEVICE MARKING CODE:  
Matte Tin(Sn) Lead Finish  
Band Indicates Cathode  
Weight: approx. 0.002g  
AEC-Q101 Qualified  
Device Type  
Device Marking  
E6  
TCBAS16  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Limits  
Symbol  
Parameter  
Test Condition  
IR=100µA  
Unit  
Min  
Max  
BV  
IR  
Breakdown Voltage  
Reverse Leakage Current  
Forward Voltage  
75  
Volts  
µA  
VR=75V  
1
VF  
IF=1mA  
0.715  
0.855  
1.1  
IF=10mA  
IF=50mA  
IF=100mA  
IF=10mA  
VR=6V  
Volts  
1.3  
TRR  
Reverse Recovery Time  
Capacitance  
4
4
nS  
pF  
RL=100  
VR=0V, f=1MHZ  
C
Number: DB-008  
April 2019, Revision G  
Page 1  

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