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TCB503HQ PDF预览

TCB503HQ

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
28页 756K
描述
Audio power amplifier

TCB503HQ 数据手册

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TCB503HQ  
CDMOS Linear Integrated Circuit Silicon Monolithic  
TCB503HQ  
Maximum Power 50 W BTL × 4ch Audio Power Amplifier IC  
1. Description  
The TCB503HQ is a power IC with built-in four-channel BTL  
amplifier developed for car audio application. The maximum  
output power POUT is 50 W using a pure complementary  
P-ch and N-ch DMOS output stage.  
In addition, a standby switch, a mute function, output DC offset  
voltage detection, various protection features are included.  
2. Applications  
Weight: 7.7 g (typ.)  
Power Amplifier IC developed for car audio applications.  
3. Features  
High output power, low distortion, and low noise property  
(for details, refer to the Table 1 Typical Characteristics).  
Built-in output DC offset detection. (Pin25)  
Built-in output clip detection. (Pin1)  
Built-in muting function. (Pin 22)  
Table 1 Typical characteristics  
(Note 1)  
Built-in auto muting functions (for low V  
sequence)  
and standby  
CC  
Test condition  
Output power (P  
Typ.  
Unit  
Built-in standby switch. (Pin4)  
)
OUT  
Built-in various protection circuits (thermal shut down,  
over-voltage, short to GND, short to V , and output to output  
CC  
short)  
V
V
V
= 15.2 V, max power  
= 14.4 V, max power  
= 14.4 V, THD = 10%  
50  
45  
29  
CC  
CC  
CC  
W
%
Start stop Cruising corresponded to V  
= 6V (Engine idle  
CC  
reduction capability)  
Total harmonic distortion (THD)  
= 4 W 0.01  
P
OUT  
Output noise voltage (V ) (Rg = 0 Ω)  
NO  
Filter: A weighted  
45  
µV  
Operating Supply voltage range (V  
)
CC  
R _amp = 4 Ω  
L
6 to 18  
V
Note 1: Typical test conditions:  
Unless otherwise specified, V  
Rg: Signal source resistance  
= 14.4 V, f = 1 kHz, R _amp = 4 Ω, and Ta = 25°C  
CC  
L
© 2018-2019  
Toshiba Electronic Devices & Storage Corporation  
1
2019-02-14  

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