Datasheet > TCB503HQ

TCB503HQ

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
28页	756K
描述
Audio power amplifier

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TCB503HQ 数据手册

TCB503HQ

CDMOS Linear Integrated Circuit Silicon Monolithic

TCB503HQ

Maximum Power 50 W BTL × 4ch Audio Power Amplifier IC

1. Description

The TCB503HQ is a power IC with built-in four-channel BTL

amplifier developed for car audio application. The maximum

output power P_OUTis 50 W using a pure complementary

P-ch and N-ch DMOS output stage.

In addition, a standby switch, a mute function, output DC offset

voltage detection, various protection features are included.

2. Applications

Weight: 7.7 g (typ.)

Power Amplifier IC developed for car audio applications.

3. Features

• High output power, low distortion, and low noise property

(for details, refer to the Table 1 Typical Characteristics).

• Built-in output DC offset detection. (Pin25)

• Built-in output clip detection. (Pin1)

• Built-in muting function. (Pin 22)

Table 1 Typical characteristics

(Note 1)

• Built-in auto muting functions (for low V

sequence)

and standby

Test condition

Output power (P

Typ.

Unit

• Built-in standby switch. (Pin4)

)

OUT

• Built-in various protection circuits (thermal shut down,

over-voltage, short to GND, short to V , and output to output

short)

= 15.2 V, max power

= 14.4 V, max power

= 14.4 V, THD = 10%

• Start stop Cruising corresponded to V

= 6V (Engine idle

reduction capability)

Total harmonic distortion (THD)

= 4 W 0.01

OUT

Output noise voltage (V ) (Rg = 0 Ω)

Filter: A weighted

µV

Operating Supply voltage range (V

)

R _amp = 4 Ω

6 to 18

Note 1: Typical test conditions:

Unless otherwise specified, V

Rg: Signal source resistance

= 14.4 V, f = 1 kHz, R _amp = 4 Ω, and Ta = 25°C

Toshiba Electronic Devices & Storage Corporation

2019-02-14

12 3 4 5 6 7...28

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