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TCB502HQ PDF预览

TCB502HQ

更新时间: 2024-11-13 14:58:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
28页 872K
描述
Audio power amplifier

TCB502HQ 数据手册

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TCB502HQ  
CDMOS Linear Integrated Circuit Silicon Monolithic  
TCB502HQ  
Maximum Power 49 W BTL × 4ch Audio Power Amp IC  
1. Description  
The TCB502HQ is a power IC with built-in four-channel BTL  
amplifier developed for car audio application. The maximum  
output power POUT is 49 W using a pure complementary P-ch  
and N-ch DMOS output stage.  
In addition, a standby switch, a mute function, output offset  
voltage detector, various protection features are included.  
2. Applications  
Weight: 7.7g (typ.)  
Power Amp IC developed for car audio applications.  
3. Features  
High output power, low distortion, and low noise property  
(for details, refer to the Table 1 Typical Characteristics).  
Built-in output offset detection for full time (Pin25)  
Built-in muting function (Pin 22)  
Table 1 Typical characteristics  
(Note 1)  
Built-in auto muting functions (for low V  
and standby  
DD  
sequence)  
Test condition  
Output power (P  
Typ.  
Unit  
Built-in standby switch (Pin4)  
Built-in various protection circuits (thermal shut down,  
over-voltage, short to GND, short to VDD, and output to output  
short)  
)
OUT  
V
V
V
= 15.2 V, max POWER  
= 14.4 V, max POWER  
= 14.4 V, THD = 10%  
49  
44  
29  
24  
DD  
DD  
DD  
Start stop Cruising corresponded to V  
= 6 V (Engine idle  
DD  
W
%
reduction capability)  
THD = 10%  
Total harmonic distortion (THD)  
= 4 W 0.006  
P
OUT  
Output noise voltage (V ) (Rg = 0 Ω)  
NO  
Filter: A weighted  
45  
µV  
Operating Supply voltage range (V  
)
DD  
R
R
= 4 Ω  
= 2 Ω  
6 to 18  
6 to 16  
L_amp  
V
L_amp  
Note 1:  
Typical test conditions: Unless otherwise specified, V  
Rg: Signal source resistance  
= 13.2 V, f = 1 kHz, R  
L_amp  
= 4 Ω, and Ta = 25°C  
DD  
1
2021-03-01  
© 2016-2021  
Toshiba Electronic Devices & Storage Corporation  

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