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TCB501HQ PDF预览

TCB501HQ

更新时间: 2023-12-20 18:45:28
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
29页 1338K
描述
Audio power amplifier

TCB501HQ 数据手册

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TCB501HQ  
CDMOS Linear Integrated Circuit Silicon Monolithic  
TCB501HQ  
Maximum Power 49 W BTL × 4ch Audio Power Amp IC  
1. Description  
The TCB501HQ is a power IC with built-in four-channel BTL  
amplifier developed for car audio application. The maximum  
output power POUT is 49 W using a pure complementary P-ch  
and N-ch DMOS output stage.  
In addition, a standby switch, a mute function, output offset  
voltage detector, high-side switch and various protection features  
are included.  
Weight: 7.7g (typ.)  
2. Applications  
Power Amp IC developed for car audio applications.  
3. Features  
High output power, low distortion, and low noise property (for details, refer to the Table 1 Typical  
Characteristics).  
Built-in high-side switches. (Pin 25)  
Built-in output offset detection for full time (Pin 1)  
Table 1 Typical characteristics  
(Note 1)  
Built-in muting function. (Pin 22)  
Built-in auto muting functions (for low V  
and standby  
DD  
sequence)  
Test condition  
Output power (P  
Typ.  
Unit  
Built-in standby switch. (Pin4)  
Built-in various protection circuits (thermal shut down,  
)
OUT  
over-voltage, short to GND, short to V , and output to output  
DD  
V
V
V
= 15.2 V, max power  
49  
44  
29  
24  
DD  
DD  
DD  
short)  
= 14.4 V, max power  
W
%
Start stop Cruising corresponded to V =6V (Engine idle  
DD  
= 14.4V, THD = 10%  
reduction capability)  
THD =10%  
Total harmonic distortion (THD)  
= 4 W 0.006  
P
OUT  
Output noise voltage (V ) (Rg = 0 Ω)  
NO  
Filter: A weighted  
45  
µV  
Operating Supply voltage range (V  
)
DD  
R
R
= 4 Ω  
= 2 Ω  
6 to 18  
6 to 16  
L_amp  
V
L_amp  
Note 1:  
Typical test conditions: Unless otherwise specified, V  
Rg: Signal source resistance  
= 13.2 V, f = 1 kHz, R  
= 4 Ω, and Ta = 25°C  
DD  
L_amp  
©2016 TOSHIBA Corporation  
1
2016-06-28  

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