是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP18,.3 | Reach Compliance Code: | compliant |
风险等级: | 5.92 | 最长访问时间: | 300 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-XDIP-T18 |
JESD-609代码: | e0 | 内存密度: | 8192 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
端口数量: | 1, (MUXED) | 端子数量: | 18 |
字数: | 1024 words | 字数代码: | 1000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 1KX8 |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC |
封装代码: | DIP | 封装等效代码: | DIP18,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 子类别: | SRAMs |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | MOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
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