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TC7WZU04FK PDF预览

TC7WZU04FK

更新时间: 2024-11-23 03:07:35
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 221K
描述
CMOS Digital Integrated Circuit Silicon Monolithic Triple Inverter (Un-Buffer)

TC7WZU04FK 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOIC包装说明:SSOP-8
针数:8Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.62
Is Samacsys:N系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-G8长度:2.3 mm
逻辑集成电路类型:INVERTER最大I(ol):0.012 A
功能数量:3输入次数:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装等效代码:TSSOP8,.12,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
传播延迟(tpd):8.9 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:0.9 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2 mm
Base Number Matches:1

TC7WZU04FK 数据手册

 浏览型号TC7WZU04FK的Datasheet PDF文件第2页浏览型号TC7WZU04FK的Datasheet PDF文件第3页浏览型号TC7WZU04FK的Datasheet PDF文件第4页浏览型号TC7WZU04FK的Datasheet PDF文件第5页浏览型号TC7WZU04FK的Datasheet PDF文件第6页浏览型号TC7WZU04FK的Datasheet PDF文件第7页 
TC7WZU04FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WZU04FU,TC7WZU04FK  
Triple Inverter (Un-Buffer)  
Features  
High output drive: ±16 mA (min) at  
Low quiescent power: ICC < 1μA (max.)  
at  
V
= 4.5 V  
CC  
TC7WZU04FU  
V
CC  
= 5.5 V, Ta=25  
Operation voltage range: V  
5.5-V tolerant inputs  
= 1.65~5.5 V  
CC (opr)  
Marking  
SM8  
US8  
Type name  
TC7WZU04FK  
ZU04  
Lot No.  
WZ  
U04  
Weight  
SSOP8-P-0.65  
SSOP8-P-0.50A  
: 0.02 g (typ.)  
: 0.01 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Pin Assignment (top view)  
Characteristics  
Power supply voltage  
Symbol  
Rating  
Unit  
V
0.5~6  
0.5~6  
V
1A  
3Y  
V
CC  
1
2
3
4
8
7
6
5
CC  
DC input voltage  
V
V
IN  
1Y  
3A  
2Y  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
0.5~V + 0.5V  
V
OUT  
CC  
2A  
I
20  
±20  
±50  
±50  
mA  
mA  
mA  
mA  
IK  
GND  
I
OK  
I
OUT  
DC V /ground current  
CC  
I
CC  
300 (SM8)  
200 (US8)  
Power dissipation  
P
mW  
D
Storage temperature  
T
65~150  
°C  
°C  
stg  
Lead temperature (10s)  
T
260  
L
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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