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TC7S66F(TE85L,F)

更新时间： 2024-01-26 10:29:45
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管
页数 文件大小 规格书
7页 160K
描述
IC,ANALOG SWITCH,SINGLE,SPST,CMOS,TSOP,5PIN,PLASTIC

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TC7S66F(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TSOP, TSOP5/6,.11,37Reach Compliance Code：unknown
风险等级：5.75模拟集成电路 - 其他类型：SPST
JESD-30 代码：R-PDSO-G5正常位置：NO
功能数量：1端子数量：5
最大通态电阻 (Ron)：400 Ω最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：TSOP封装等效代码：TSOP5/6,.11,37
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
电源：2/12 V认证状态：Not Qualified
子类别：Multiplexer or Switches表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.95 mm
端子位置：DUALBase Number Matches：1

TC7S66F(TE85L,F) 数据手册

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TC7S66F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7S66F,TC7S66FU  
Bilateral Switch  
The TC7S66 is a high Speed C2MOS Bilateral Switch fabricated  
with silicon gate C2MOS technology.  
TC7S66F  
It consists of a high speed switch capable of controlling either  
digital or analog signals while maintaining the C2MOS low power  
dissipation.  
Control input (C) is provided to control the switch.  
The switch turns ON while the C input is high, and the switch  
turns OFF while low.  
Input is equipped with protection circuits against static  
discharge or transient excess voltage.  
TC7S66FU  
Features  
•
•
•
•
•
•
High speed: t = 7 ns (typ.) @V  
= 5 V  
pd  
CC  
Low power dissipation: I  
= 1 μA (max) @Ta = 25°C  
CC  
High noise immunity: V  
= V  
= 28% V  
(min)  
NIH  
NIL  
CC  
Low ON resistance: R  
= 100 Ω (typ.) @V  
= 9 V  
ON  
CC  
Low T.H.D: THD = 0.05% (typ.) @V  
= 5 V  
CC  
Pin and function compatible with TC4S66F  
Weight  
SSOP5-P-0.95 : 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
DC Supply voltage  
Symbol  
Rating  
Unit  
V
−0.5 to 13  
V
V
CC  
Control input voltage  
Switch I/O voltage  
V
−0.5 to V  
+ 0.5  
IN  
I/O  
CK  
OK  
CC  
CC  
V
−0.5 to V  
+ 0.5  
V
Control diode current  
Output diode current  
Through I/O current  
I
±20  
mA  
mA  
mA  
mA  
mW  
°C  
I
±20  
±12.5  
±25  
I
T
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
200  
D
Storage temperature range  
Lead temperature (10 s)  
T
stg  
−65 to 150  
T
L
260  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-09-30  
1234567

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