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TC74ACT245F(EL) PDF预览

TC74ACT245F(EL)

更新时间: 2024-11-09 12:59:47
品牌 Logo 应用领域
东芝 - TOSHIBA 总线收发器逻辑集成电路光电二极管
页数 文件大小 规格书
11页 199K
描述
IC ACT SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO20, 0.300 INCH, PLASTIC, SOIC-20, Bus Driver/Transceiver

TC74ACT245F(EL) 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:20
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.18其他特性:WITH DIRECTION CONTROL
系列:ACTJESD-30 代码:R-PDSO-G20
JESD-609代码:e0长度:12.8 mm
负载电容(CL):50 pF逻辑集成电路类型:BUS TRANSCEIVER
位数:8功能数量:1
端口数量:2端子数量:20
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240传播延迟(tpd):9 ns
认证状态:Not Qualified座面最大高度:1.9 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:5.3 mm
Base Number Matches:1

TC74ACT245F(EL) 数据手册

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TC51WHM516AXBN65,70  
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM  
DESCRIPTION  
The TC51WHM516AXBN is a 33,554,432-bit pseudo static random access memory(PSRAM) organized as  
2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high  
density, high speed and low power. The device operates single power supply. The device also features SRAM-like  
W/R timing whereby the device is controlled by CE1 , OE , and WE on asynchronous. The device has the page  
access operation. Page size is 8 words. The device also supports deep power-down mode, realizing low-power  
standby.  
Access Times:  
FEATURES  
Organized as 2,097,152 words by 16 bits  
Single power supply voltage of 2.6 to 3.3 V  
Direct TTL compatibility for all inputs and outputs  
Deep power-down mode: Memory cell data invalid  
Page operation mode:  
TC51WHM516AXBN  
65  
70  
Access Time  
CE1 Access Time  
OE Access Time  
Page Access Time  
Package:  
65 ns  
65 ns  
25 ns  
30 ns  
70 ns  
70 ns  
25 ns  
30 ns  
Page read operation by 8 words  
Logic compatible with SRAM R/W ( WE ) pin  
Standby current  
Standby  
70 µA  
5 µA  
Deep power-down standby  
P-TFBGA48-0607-0.75AZ (Weight:  
g typ.)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
1
2
3
4
5
6
A0 to A20  
A0 to A2  
Address Inputs  
Page Address Inputs  
A
B
C
D
E
F
LB  
OE  
UB  
A0  
A3  
A5  
A1  
A4  
A2  
CE2  
I/O1  
I/O3  
I/O1 to I/O16 Data Inputs/Outputs  
I/O9  
CE1  
I/O2  
I/O4  
I/O5  
I/O6  
CE1  
CE2  
Chip Enable Input  
Chip select Input  
Write Enable Input  
Output Enable Input  
Data Byte Control Inputs  
Power  
I/O10 I/O11  
A6  
V
I/O12 A17  
I/O13 NC  
A7  
V
DD  
SS  
WE  
V
A16  
A15  
A13  
A10  
V
DD  
SS  
OE  
I/O15 I/O14 A14  
I/O7  
LB , UB  
G
H
I/O16 A19  
A18 A8  
A12  
A9  
WE I/O8  
A11 A20  
V
DD  
GND  
NC  
Ground  
(FBGA48)  
No Connection  
2002-08-22 1/11  

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